Photoelectric conversion device and imaging system
a conversion device and imaging system technology, applied in the direction of electrical equipment, semiconductor devices, radioation controlled devices, etc., can solve the problem of noise in the output signal of the neighboring pixel
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first embodiment
[0021]FIG. 1 is a block diagram illustrating a general configuration of a solid state imaging device according to the present embodiment. The solid state imaging device may be called a Complementary Metal Oxide Semiconductor (CMOS) image sensor or the like, for example. The solid state imaging device is one of the forms of a photoelectric conversion device to which the present invention may be applied. The photoelectric conversion device may include a focus detection sensor, a light amount sensor, or the like, for example.
[0022]The solid state imaging device includes a pixel array 20, a vertical scanning circuit 30, a column amplification circuit 40, a horizontal scanning circuit 50, a control circuit 60, and an output circuit 70. These circuits may be formed on one or more semiconductor substrates. The pixel array 20 includes a plurality of pixels 10 arranged so as to form multiple rows and multiple columns. The vertical scanning circuit 30 is a scanning circuit that supplies, via ...
second embodiment
[0034]FIG. 5 is a schematic diagram of pixels 10 in a plan view according to the second embodiment. In the present embodiment, each connection wiring 401 (first wiring) corresponding to the connection wring 201 of the first embodiment is arranged so as to surround the outer circumference of each photoelectric conversion portion 101 in a plan view. The connection wiring 401 is formed in the first wiring layer. Since other elements than the connection wiring 401 are the same as those in the first embodiment, the description thereof will be omitted.
[0035]According to this configuration, incidence of a light not only to the gate electrode 304 of the transfer transistor 103 but also to each gate electrode of the reset transistor 104, the SF transistor 105, and the selection transistor 106 is blocked by the connection wiring 401. Therefore, the present embodiment provides the photoelectric conversion device in which a noise is further reduced. Furthermore, in the present embodiment, the c...
third embodiment
[0037]FIG. 6 is a schematic diagram of pixels 10 in a plan view according to the third embodiment. In the present embodiment, the first wiring layer further includes a dummy wiring 502 (second wiring). Further, the wirings on the first wiring layer including a connection wiring 501 (first wiring) corresponding to the connection wiring 201 of the first embodiment and the dummy wiring 502 are arranged so as to surround the outer circumference of the photoelectric conversion portion 101 in a plan view. Since other elements than the connection wiring 501 are the same as those in the first embodiment, the description thereof will be omitted.
[0038]In a similar manner to the second embodiment, incidence of a light not only to the gate electrode 304 of the transfer transistor 103 but also to each gate electrode of the reset transistor 104, the SF transistor 105, and the selection transistor 106 is blocked by the connection wiring 501 and the dummy wiring 502. Therefore, according to the pre...
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