Substrate treatment apparatus and method of manufacturing semiconductor device
a technology of substrate treatment and manufacturing method, which is applied in the direction of coating, chemical vapor deposition coating, metallic material coating process, etc., can solve the problems of adverse possibility, tma decomposition, and not yet commercially practicabl
Inactive Publication Date: 2006-11-16
KOKUSA ELECTRIC CO LTD
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Benefits of technology
[0010] a single gas supply member which supplies said gases into said processing chamber and which has a portion extending to
Problems solved by technology
A conventional ALD apparatus which forms the Al2O3 film is called a single wafer type apparatus in which the number of substrates to be processed in one processing furnace at a time is one to five, and an apparatus called a batch type apparatus in which 25 or more substrates are arranged in parallel to an axial direction of a reaction tube has not yet become commercially practical.
When an Al2O3 film is formed by such a vertical batch type apparatus using TMA and O3, if a TMA nozzle and an O3 nozzle separately disposed vertically in the reaction furnace, there is an adverse possibility that TMA is decompose in the TMA gas nozzle and Al (aluminum) film is formed, and if the film becomes thick, it is peeled off and becomes a foreign matter generating source.
Method used
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embodiment 1
[0034]FIG. 1 is a schematic diagram showing a structure of a vertical substrate processing furnace according to an embodiment, and is a vertical sectional view of a processing furnace portion, and FIG. 2 is a schematic diagram showing a structure of the vertical substrate processing furnace, and is a transverse sectional view of the processing furnace portion. FIG. 3A is a schematic diagram used for explaining a nozzle 233 of the vertical substrate processing furnace of a semiconductor producing apparatus of the embodiment, and FIG. 3B is a partial enlarged diagram of a portion A in FIG. 3A.
[0035] A reaction tube 203 as a reaction container is provided inside of a heater 207 which is heating means. The reaction tube 203 processes wafers 200 which are substrates. A manifold 209 made of stainless steel for example is engaged with a lower end of the reaction tube 203. A lower end opening of the manifold 209 is air-tightly closed with a seal cap 219 which is a lid through an O-ring 220...
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Abstract
A substrate treatment apparatus, comprising a reaction tube (203) and a heater (207) heating a silicon wafer (200), wherein trimethyl aluminum (TMA) and ozone (O3) are alternately fed into the reaction tube (203) to generate Al2O3 film on the surface of the wafer (200). The apparatus also comprises supply tubes (232a) and (232b) for flowing the ozone and TMA and a nozzle (233) supplying gas into the reaction tube (203). The two supply tubes (232a) and (232b) are connected to the nozzle (233) disposed inside the heater (207) in a zone inside the reaction tube (203) where a temperature is lower than a temperature near the wafer (200) and the ozone and TMA are supplied into the reaction tube (203) through the nozzle (233).
Description
TECHNICAL FIELD [0001] The present invention relates to a substrate processing apparatus and a producing method of a semiconductor device, and more particularly, to a semiconductor producing apparatus which forms a film by ALD (Atomic layer Deposition) method used when an Si semiconductor device is produced, and to a producing method of a semiconductor device by the ALD method. BACKGROUND ART [0002] A film forming processing using the ALD method which is one of CVD (Chemical Vapor Deposition) methods will be explained briefly. [0003] The ALD method is a method in which two (or more) kinds of raw material gases used for forming a film are alternately supplied onto a substrate by one kind by one kind under certain film forming conditions (temperature, time and the like), the gases are allowed to be adsorbed by one atomic layer by one atomic layer, and a film is formed utilizing a surface reaction. [0004] That is, when an Al2O3 (aluminum oxide) film is to be produced for example, a hig...
Claims
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Login to View More IPC IPC(8): C23C16/00H01L21/31C23C16/455C23C16/40C23C16/44C23C16/46H01L21/00H01L21/314H01L21/316
CPCC23C16/403C23C16/45546C23C16/4557C23C16/45578C23C16/46H01L21/67109H01L21/02178H01L21/02181H01L21/0228H01L21/3141H01L21/3162H01L21/02164H01L21/02211C23C16/4405
Inventor SAKAI, MASANORIKAGAYA, TORUYAMAZAKI, HIROHISA
Owner KOKUSA ELECTRIC CO LTD