Substrate polishing apparatus and substrate polishing method
a technology of substrate polishing and polishing apparatus, which is applied in the direction of grinding machine components, manufacturing tools, lapping machines, etc., can solve the problems of increasing the number of tables, increasing the cost of the entire polishing apparatus, so as to achieve uniform surface polishing
Inactive Publication Date: 2007-10-11
KIMURA NORIO +2
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Benefits of technology
[0011] The present invention is made in consideration of the above-mentioned conventional drawbacks. An object of the present invention is to provide a substrate polishing apparatus and a substrate polishing method in which, when plural kinds of films on a semiconductor substrate are polished, plural stage polishing processes can be performed on a single polishing table to reduce the number of tables, to make the entire apparatus compact and to enhance the through-put of semiconductor substrate polishing.
[0017] A purpose for polishing the semiconductor substrate on which a pattern was formed is to remove minute unevenness (for example, unevenness having a width of 0.1 μm to 2 μm and height of 500 nm to 1000 nm) and to achieve flatness. However, since a polishing pad has elasticity, the pad follows a certain unevenness, with the result that the unevenness cannot be removed completely. In this case, the flatness is apt to be achieved if the polishing is performed with a small load (urging force) and faster rotational speed. However, since the load is small, the polishing speed is reduced. In consideration of this, as mentioned above, by performing the polishing on the same polishing table through the plural polishing processes while changing the pressing force for pressing the semiconductor substrate and the number of revolutions of the top ring and / or the polishing table, the polishing is firstly effected with a great load and fast rotational speed, and, thereafter, the unevenness is removed with a small load. In this way, polishing that flattens the surface to be polished can be achieved. Further, by reducing the relative speed for finish polishing, the removal of scratches on the surface can be facilitated.
[0021] To achieve the above object, according to a further aspect of the present invention, there is provided a substrate polishing method in which a substrate held by a top ring is urged against a polishing surface of a polishing table and a film formed on a surface of the semiconductor substrate is polished to achieve flatness by a relative movement between the semiconductor substrate and the polishing surface. The polishing is performed through three or more polishing processes in which at least one of a substrate pressing load for pressing the substrate against the polishing surface of the polishing table, a relative speed between the polishing table and the substrate, and the polishing liquid is changed.
[0022] As mentioned above, by performing the polishing through three or more polishing processes in which at least one of the substrate pressing load, the relative speed between the polishing table and the substrate, and the polishing liquid is changed (for example, the substrate pressing load is changed), the uniformity of the polished surface is improved in comparison with the prior art, which will be described later.
[0027] As mentioned above, by performing the water polishing process and the atomizer polishing process after the last polishing process is finished, since high temperature portions of the surface to be polished of the substrate and the polishing surface of the polishing table, heated during the preceding polishing process, are cooled and the polishing liquid (for example, slurry) used in the preceding polishing process is removed, erosion of the surface to be polished of the substrate can be prevented, thereby enhancing uniformity.
[0029] As mentioned above, by polishing the substrate on which the W film was formed through three or more polishing processes while changing the substrate pressing load, for example, uniformity of the surface to be polished of the substrate will be improved in comparison with the prior art, as will be described later.
Problems solved by technology
And, in each stage of polishing, since a polishing table must be changed, as a whole, the number of tables is increased and the entire polishing apparatus is made bulky and complicated and is also made more expensive.
Further, the through-put of the semiconductor substrate polishing cannot be improved.
Method used
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[0039] Table 1 is a table showing an example of a relationship between a flow of polishing processes of the polishing apparatus according to the present invention and the kind of abrasive grain / slurry, the top ring pressing force and the top ring revolution number used;
[0040] Table 2 is a table showing a relationship between polishing processes of the substrate polishing method according to the present invention and polishing conditions;
[0041] Table 3 is a table showing an example of uniformity in substrate polishing effected by a conventional substrate polishing method; and
[0042] Table 4 is a table showing an example of uniformity in substrate polishing effected by the substrate polishing method according to the present invention.
[0043] The present invention will now be explained in connection with embodiments thereof with reference to the accompanying drawings. FIG. 2 is a plan view showing a substrate processing apparatus having a substrate polishing apparatus according to th...
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Abstract
A substrate polishing apparatus wherein a semiconductor substrate is held by a top ring 10-2 or 11-2 and is pressed against a polishing surface of a polishing table 10-1 or 10-2. A surface to be polished of the semiconductor substrate is polished by a relative movement between the semiconductor substrate and the polishing surface. The apparatus includes a pressing force changing mechanism for changing a pressing force for pressing the semiconductor substrate, a relative movement seed changing mechanism for changing the number of revolutions of the top ring and / or the polishing table, and a control mechanism. The control mechanism performs the polishing through plural polishing processes on the polishing table 10-1 or 10-2 while changing the pressing force and the number of revolutions.
Description
[0001] This is a divisional application of U.S. patent application Ser. No. 09 / 864,208, filed May 25, 2001, now abandoned.BACKGROUND OF THE INVENTION [0002] The present invention relates to a substrate polishing apparatus and a substrate polishing method for polishing a metallic coating or film formed on a surface of a substrate used in a semiconductor device manufacturing process and particularly in a process for forming metallic wiring with copper and the like. Further, the present invention relates to a substrate polishing method for flattening and mirror-polishing a film formed on a surface of a semiconductor substrate, and more particularly it relates to a substrate polishing method suitable for flattening and mirror-polishing a metallic film formed on the surface of the substrate. [0003] As the integration density on a semiconductor device has been increased, adoption of a material of higher conductivity has been requested as a material for forming a wiring circuit. To satisfy...
Claims
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Login to View More IPC IPC(8): B24B1/00B24B7/00B24B37/04B24B49/16H01L21/00H01L21/02H01L21/321H01L21/768
CPCB24B37/042B24B49/006B24B49/16H01L21/02074H01L21/7684H01L21/3212H01L21/67046H01L21/67051H01L21/0209
InventorKIMURA, NORIOKOHAMA, TATSUYAAKAGI, MAKOTO
OwnerKIMURA NORIO