EFAB Methods Including Controlled Mask to Substrate Mating

Abstract

Embodiments include treatment of substrates, formation of structures, and formation of multilayer structures using contact masks where a controlled mating of the contact masks and substrates is used. Some embodiments involve controlled mating at speeds equal to or less than 10 microns / second, more preferably equal to or less than 5 microns / second, and even more preferably equal to or less than 1 micron / second. Some embodiments involve controlled mating that uses a higher speed of approach when further away followed by a slower speed of approach to cause mating. Some embodiments involve controlled mating that uses a higher speed of approach when making preliminary contact, then backing away a desired distance, and then making a mating approach that causes mating while using a slower mating speed.

Description

RELATED APPLICATION DATA[0001]This application is a continuation of U.S. patent application Ser. No. 10 / 997,709 (Microfabrica Docket No. P-US125-A-MF), filed Nov. 24, 2008 which in turn claims benefit of U.S. Provisional Patent Application No. 60 / 525,797, filed Nov. 26, 2003. These applications are incorporated herein by reference as if set forth in full.FIELD OF THE INVENTION[0002]The present invention relates generally to the field of Electrochemical Fabrication and the associated formation of three-dimensional structures (e.g. microscale or mesoscale structures). In particular, it relates to methods and apparatus for forming such three-dimensional structures using contact masks to control selective deposition locations wherein the mating of the masks and substrate occur in a controlled manner.BACKGROUND OF THE INVENTION[0003]A technique for forming three-dimensional structures (e.g. parts, components, devices, and the like) from a plurality of adhered layers was invented by Adam ...

AI Technical Summary

Benefits of technology

The invention provides a technique for forming microscale or mesoscale single layer or multilayer structures using electrochemical fabrication techniques that improve the reliability of masks to substrates and reduce the likelihood of inadvertent material deposition. The technique involves selectively patterning the deposition of a first material onto a substrate, including the use of a contact mask and a relative speed between the mask and substrate that is not greater than about 10 microns per second. The resulting structures have improved layer-to-layer adhesion and reduced susceptibility to inadvertent material deposition.

Problems solved by technology

The CC mask plating process is distinct from a “through-mask” plating process in that in a through-mask plating process the separation of the masking material from the substrate would occur destructively.

For example, as contact mask size (e.g. area) increases, reliable mating of the mask to a substrate can become more difficult or less reliable.

In some EFAB microfabrication implementations, failure to reliably mate masks and substrates can result in the presence of thin depositions of sacrificial material between portions of consecutive layers where structural material should bond to structural material which in turn can result in interlayer adhesion failures when sacrificial material is removed In other embodiments, thin depositions of structural material can exist in regions that are intended to be occupied by sacrificial material which in turn can result in difficulties in removing sacrificial material and / or unintended electrical shorting between what would otherwise be isolated structural material portions of a structure, part, or device.

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