Three-dimensional nonvolatile memory device and a method of fabricating the same
Pending Publication Date: 2021-08-19
SAMSUNG ELECTRONICS CO LTD
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Benefits of technology
The patent describes a three-dimensional nonvolatile memory device with a cell area and an extension area. The device includes a vertical structure with electrode layers and interlayer insulating layers alternately stacked on the substrate. A separation insulating layer is formed on the substrate to separate the electrode layers in a second direction that intersects the first direction. The device also includes a horizontal layer and a material layer on the substrate. The technical effects of this patent include a more efficient use of space and improved performance of the memory device.
Problems solved by technology
Nevertheless, due to demands for an increase in storage capacity, there is a need to increase the storage space of flash memory.
Method used
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[0025]Hereinafter, exemplary embodiments of the inventive concept will be described in detail with reference to the accompanying drawings. Like reference numerals in the drawings may denote like elements, and thus their repetitive description may be omitted.
[0026]FIG. 1 is an equivalent circuit diagram of a memory cell of a three-dimensional nonvolatile memory device 10 according to an exemplary embodiment of the inventive concept.
[0027]Referring to FIG. 1, the three-dimensional nonvolatile memory device 10 according to the present embodiment may include a common source line CSL, a plurality of bit lines BL0 to BLm, and a plurality of cell strings CSTR. The bit lines BL0 to BLm may be two-dimensionally arranged, and the plurality of cell strings CSTR may be connected in parallel to the bit lines BL0 to BLm, respectively. For example, a plurality of cell strings CSTR may be connected the bit line BLm and another plurality of cell strings CSTR may be connected to the bit line BL0. The...
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A three-dimensional nonvolatile memory device includes: a substrate including a cell area and an extension area having a staircase structure; a vertical structure on the substrate; a stacking structure having electrode layers and interlayer insulating layers on the substrate; a separation insulating layer on the substrate and separating the electrode layers; and a through-via wiring area adjacent to the cell or extension area and having through-vias passing through the substrate, wherein the cell area includes a main cell area in which normal cells are arranged and an edge cell area, the separation insulating layer includes a main separation insulating layer in the main cell area and an edge separation insulating layer in the edge cell area, and a lower surface of the main separation insulating layer is higher than the upper surface of the substrate and has a different depth than a lower surface of the edge separation insulating layer.
Description
CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims priority under 35 U.S.C. 119 to Korean Patent Application No. 10-2020-0017777, filed on Feb. 13, 2020, in the Korean Intellectual Property Office, the disclosure of which is incorporated by reference herein in its entirety.TECHNICAL FIELD[0002]The inventive concept relates to a nonvolatile memory device and a method of fabricating the same, and more particularly, to a nonvolatile memory device having a vertical channel structure with an increased degree of integration and a method of fabricating the same.DISCUSSION OF RELATED ART[0003]Recently, there has been an increase in the number of devices using a nonvolatile memory device. For example, MP3 players, digital cameras, portable phones, camcorders, flash cards, solid-state disks (SSDs), and the like may use a nonvolatile memory as a storage device. A nonvolatile memory can retrieve stored information after having been power cycled. Among nonvolatile memories, flas...
Claims
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Patent Timeline
Login to View More IPC IPC(8): H01L27/11582H01L27/11556H01L27/11529H01L27/11573H01L23/528H01L23/535H01L23/532
CPCH01L27/11582H01L27/11556H01L27/11529H01L23/53271H01L23/5283H01L23/535H01L23/53257H01L27/11573H10B43/27H10B43/10H10B43/40H01L29/792H01L29/66833H10B43/50H10B43/30H10B41/27H10B41/41
Inventor JEONG, SEONGHUNLEE, BYOUNGILKANG, BOSUK
Owner SAMSUNG ELECTRONICS CO LTD