Semiconductor device with single step height and method for fabricating the same
a semiconductor device and single step technology, applied in the direction of semiconductor devices, electrical appliances, transistors, etc., can solve the problems of continuous increase, reduce the defect rate of semiconductor devices, reduce the stress of semiconductor devices, and improve the yield of semiconductor devices
Active Publication Date: 2022-04-21
NAN YA TECH
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- Abstract
- Description
- Claims
- Application Information
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Benefits of technology
This design reduces defects and improves the yield of semiconductor devices by alleviating stress during the formation of the first hard mask layer, resulting in enhanced performance and reliability.
Problems solved by technology
However, a variety of issues arise during the scaling-down process, and such issues are continuously increasing.
Therefore, challenges remain in achieving improved quality, yield, performance, and reliability and reduced complexity.
Method used
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[0030]The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and / or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and / or configurations discussed.
[0031]F...
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Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The method for fabricating the semiconductor device includes providing a substrate including an array area and a peripheral area adjacent to the array area, forming word line structures and source / drain regions in the array area, and a word line protection layer on the array area, forming a first hard mask layer over the substrate and having a step height adjacent to a border between the array area and the peripheral area, forming a bit line contact in the array area and between the word line structures by using the first hard mask layer as a pattern guide, and forming a gate electrode layer on the peripheral area.
Description
TECHNICAL FIELD[0001]The present disclosure relates to a semiconductor device and a method for fabricating the semiconductor device, and more particularly, to a semiconductor device with a single step height and the method for fabricating the semiconductor device with the single step height.DISCUSSION OF THE BACKGROUND[0002]Semiconductor devices are used in a variety of electronic applications, such as personal computers, cellular telephones, digital cameras, and other electronic equipment. The dimensions of semiconductor devices are continuously being scaled down to meet the increasing demand of computing ability. However, a variety of issues arise during the scaling-down process, and such issues are continuously increasing. Therefore, challenges remain in achieving improved quality, yield, performance, and reliability and reduced complexity.[0003]This Discussion of the Background section is provided for background information only. The statements in this Discussion of the Backgrou...
Claims
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IPC IPC(8): H01L27/108H10B12/00
CPCH01L27/10894H01L27/10876H01L27/10888H01L27/10897H01L27/10823H01L21/76831H01L21/76834H01L21/76879H01L21/76813H01L21/76816H10B12/34H10B12/053H10B12/485H10B12/09H10B12/50
Inventor CHEN, HUI-LINWANG, MAO-YINGLIN, YU-TINGTIEN, LAI-CHENG
Owner NAN YA TECH