Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Reference voltage source for low temperature coefficient with gap

A low temperature coefficient, reference reference technology, applied in the direction of adjusting electrical variables, control/regulating systems, instruments, etc., can solve the problems of the comparator being unable to determine which reference voltage to output, misoperation, etc., to reduce the requirements of the process, overcome the The temperature coefficient is high and the effect of solving the temperature compensation problem

Active Publication Date: 2009-01-28
CHIPSEA TECH SHENZHEN CO LTD
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0031] 1. The influence of the offset voltage of the comparison circuit on the selection of the reference voltage
Generally, in the CMOS process, the offset voltage of the comparator will reach 20-50mV. With such a large offset voltage, a relatively high-precision reference voltage is a fatal problem.
[0032] 2. When the voltages of VBG1 and VBG2 are very close, the comparator will not be able to determine which reference voltage to output, which may easily cause misoperation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Reference voltage source for low temperature coefficient with gap
  • Reference voltage source for low temperature coefficient with gap
  • Reference voltage source for low temperature coefficient with gap

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0051] The present invention will be further described below in conjunction with the accompanying drawings.

[0052] Such as Figure 7 , Figure 8 As shown, the present invention is composed of a PTAT current generation circuit, a reference voltage synthesis circuit, a second-order compensation current generation circuit, a base current cancellation circuit, a start-up circuit and a current mirror circuit.

[0053] The PTAT current generation circuit includes a seventh MOS transistor MN1, an eighth MOS transistor MN2, a third transistor P1, a fourth transistor P2, and a second resistor R1. The gates of the seventh MOS transistor MN1 and the eighth MOS transistor MN2 are connected to the reference The output terminal of the voltage starting circuit is connected, the drain of the seventh MOS transistor MN1 is connected to its gate, and the drains of the seventh MOS transistor MN1 and the eighth MOS transistor MN2 are connected to the first current mirror circuit, wherein the ei...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The band-gap reference voltage (RV) source with low temperature coefficient (TC) includes PTAT current generation circuit, start circuit of RV, combiner circuit of RV, neutralization circuit of base current, mirror circuit of first current. The band-gap RV source with low TC also includes generation circuit of second order temperature compensation current, which is connected to the mirror circuit of first current, and the combiner circuit of RV. Through square relation between drain-source current and grid-source voltage drop of MOS tube, inputting PTAT current and band-gap RV generates second order compensation current. The second order compensation current is output to the combiner circuit of RV to generate second order compensation voltage to compensate second order TC of RV so as to produce RV with very low TC. The invention overcomes issue of TC on the high side in traditional band-gap RV. Using standard CMOS technique realizes band-gap RV with very low TC.

Description

【Technical field】 [0001] The invention relates to the technical fields of power supply and microelectronics, in particular to a low temperature coefficient bandgap reference voltage source. 【Background technique】 [0002] In the design of analog and analog-digital mixed-signal chips, it is often necessary to generate a reference voltage with a low temperature coefficient inside the chip. This reference voltage can be provided to the inside or outside of the chip as a reference voltage to generate various required voltages. Using a reference voltage chip or other circuits It can be used to complete analog-to-digital conversion, digital-to-analog conversion, various working voltage sources, etc. [0003] Especially in some application fields with high precision requirements and good temperature characteristics, a reference voltage source with extremely low temperature coefficient is often very necessary, even absolutely necessary. [0004] For example, in the application fiel...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G05F3/08G05F3/26
Inventor 周命福冯秉刚王金琐刘小灵
Owner CHIPSEA TECH SHENZHEN CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products