Equipment for reacting sputtering

Abstract

Device for reactive sputtering comprises a controllable valve (19) to control the total gas flow into a sputtering chamber (2), and a control unit (29) for keeping the ratio of the partial pressures of at least two gases constant. An independent claim is also included for a process for controlling the discharge voltage during reactive sputtering.

Description

technical field [0001] The invention relates to a device for reactive sputtering. Background technique [0002] Usually, in reactive sputtering, at least two gases are used: a gas, which in most cases is usually an inert gas, and which excites particles outside the target in ionized form; Compounds are formed. The compound is then deposited as a thin film layer on a substrate, such as a glass plate. [0003] In order to accelerate ions of a noble gas to a target, a voltage must be applied to the target. The voltage between the target and the counter depends inter alia on the gas pressure obtained within the sputtering chamber. If the non-conductive substrate to be coated is moving within the sputtering chamber, this voltage also depends on the specific position of the substrate. [0004] Therefore, the dependence of voltage on pressure can be interpreted as, at high pressure, atoms are still present in the gas volume, so that more charge carriers are still generated. Th...

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Problems solved by technology

On the contrary, in most cases, the sputtering rate of the reaction product is generally lower than that of the pure metal

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