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Programming method of multiple level memory cell

A programming method and multi-level storage technology, applied in the programming field of multi-level memory cells, can solve problems such as inability to meet requirements, and achieve the effect of controlling adverse effects and reducing misjudgments

Inactive Publication Date: 2009-04-08
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, as the application software of the computer becomes larger and larger, the required memory capacity is also larger and larger, so the known memory elements that can be used to store 1 or 2 bits can no longer meet the current needs.

Method used

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  • Programming method of multiple level memory cell
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  • Programming method of multiple level memory cell

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Embodiment Construction

[0033] The method for programming a multi-level memory cell proposed by the present invention is suitable for a non-volatile memory cell whose charge storage layer is a non-conductive material, such as a silicon nitride read-only memory cell. In addition, the programming method of the present invention is a programming method of hole writing and electron erasing. Furthermore, the programming method of the present invention injects electrons into the charge storage layer first, so as to increase the threshold voltage of each memory cell in the entire memory element. Since this method of operation operates on the entire memory element, it can be viewed as an electronic erase operation. Then inject an appropriate amount of holes into the selected memory cell to reduce the threshold voltage value of the memory location, so as to achieve the purpose of programming. The above programming method of hole writing and electron erasing is also called "PHINES operation".

[0034] Please...

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Abstract

The invention relates to a method for programming multi-stage memory unit, which comprises: first, supplying memory unit which comprises the first and second memory positions; then erasing the memory units, to improve the threshold voltage value of first and second memory positions; then judging to compare the first and second programming conditions relative to the first and second memory positions, to select right program steps.

Description

technical field [0001] The present invention relates to a memory operation method, and in particular to a multi-level memory cell (Multiple Level Cell, MLC) programming method. Background technique [0002] Memory elements can be classified into volatile and non-volatile memories according to whether they can still save data after power off. Among them, the non-volatile memory has become a memory element widely used in personal computers and electronic devices due to its advantages of being writable, erasable and retaining data after power failure. [0003] Generally speaking, a non-volatile memory is composed of multiple memory cells, and each memory cell is composed of a bottom dielectric layer (tunneling layer), a charge storage layer, a top dielectric layer (charge blocking layer) and a control gate. The polar layers are stacked one after the other. Moreover, according to the different materials of the charge storage layer, a non-volatile memory unit can be used to sto...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/10G11C11/56
Inventor 吴昭谊
Owner MACRONIX INT CO LTD