Testing method and circuit of current voltage property

Abstract

The invention relates to a current-voltage characteristic measuring method and circuit, using two clock signals with different duty cycles and inputting them into a device to measure its current-voltage characteristic. And the invention can reduce self-heating effect of the to-be-measured device and enlarges the measurable range of the to-be-measure device.

Description

technical field [0001] The present invention relates to a measurement method and circuit of electrical characteristics, and in particular to a measurement method and circuit of current and voltage characteristics. Background technique [0002] Traditionally, measuring the parameters of components under static bias voltage will encounter factors such as self-heating effect, which will cause the measurement results to be different from the ideal values. The self-heating effect is due to the increase of the temperature of the component, which reduces the electron mobility and reduces the current of the component. Especially in high-bias, high-power devices, such as laterally diffused metal oxide semiconductor (LDMOS) and silicon-on-insulator (SOI) transistor devices, the self-heating effect is more obvious. [0003] For the convenience of description, the devices under test in the following figures all take N-type metal-oxide-semiconductor (NMOS) transistors as examples. figu...

AI Technical Summary

Problems solved by technology

The disadvantage of this method is that the transistor may break down, for example: in order to make Vout the maximum operating voltage of this transistor, VDD=Vout+Id*R

When the clock signal is low voltage (LO), the drain will see VDD=Vout+Id*R, which will cause the junction between the drain and the substrate to collapse

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