Large area VHF-PECVD reaction chamber electrode capable of obtaining even electric field

A uniform electric field, large area technology, applied in the field of electrode design of large area VHF-PECVD reaction chamber, can solve the problems affecting the uniformity of potential distribution, etc., to solve the uniformity of potential distribution, suppress the logarithmic singularity effect, and improve the electric field distribution The effect of uniformity

Inactive Publication Date: 2009-07-08
NANKAI UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the excitation frequency increases when applied to large-area reaction chambers, conventional capacitively coupled parallel-plate electrodes (such as figure 2 shown) reaction chamber (such as figure 1 Shown) or in reaction chambers using ladder-type electrodes, the standing wave effect and the potential logarithmic singularity effect near the power feed connection end seriously affect the uniformity of the potential distribution

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Large area VHF-PECVD reaction chamber electrode capable of obtaining even electric field
  • Large area VHF-PECVD reaction chamber electrode capable of obtaining even electric field
  • Large area VHF-PECVD reaction chamber electrode capable of obtaining even electric field

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] A set of grooved electrode structures with symmetrical ends ( Figure 5 shown).

[0043] In this example, the length of the rectangular parallel plate hollow electrode is L=120cm, the width W=40cm, the height H=10cm, and the thickness of the electrode wall is 1cm; the side feed-in method at both ends of the electrode is adopted, and the two power feed-in ports are located on the side of the wide side of the electrode The center position of the power feed port, that is, the side close to the substrate, is engraved with two rectangular slots. The length of the slot is 38cm, the width is 1cm, and the interval between the two slots is 1.5cm. The depth is 1cm and communicates with the inside of the electrode. The excitation frequency power supply of 40.68MHz is applied to carry out equal phase and equal amplitude power feeding at both ends. Using the PECVD reaction chamber with the electrode structure of this example, the theoretical calculation of the electric field distr...

Embodiment 2

[0045] Point contact feed-in port, intermittent multi-slot electrode structure ( Figure 7 shown).

[0046] In this example, the length of the rectangular parallel plate hollow electrode is L=120cm, the width W=80cm, the height H=10cm, and the thickness of the electrode wall is 1cm; the side four-terminal symmetrical feed-in method is adopted, and the four power feed-in ports are located on the long side of the electrode L The horizontal midline position on the side, the distance between the centers of the two ports is 70cm; grooves are carved on the side of the power feed port close to the substrate, and two rectangular grooves are carved on one side of each port. The length of the groove is 30cm, the width is 1cm, and the distance between the two grooves 2cm, the depth of the groove is 1cm, and it communicates with the inside of the electrode. The excitation frequency power supplies of 40.68MHz and 54.24MHz were applied respectively, and the four-terminal equal-phase and eq...

Embodiment 3

[0048] Line contact feed-in port, continuous multi-slot electrode structure ( Figure 10 shown).

[0049] In this example, the length of the rectangular parallel plate hollow electrode is L=120cm, the width W=80cm, the height H=19cm, and the thickness of the electrode wall is 1cm; the four-terminal symmetrical side feeding method of the electrode is adopted, and the power feeding port is strip-shaped, strip-shaped The port width is 7cm and its thickness is negligible. The four strip-shaped power feed-in ports are located on the midline of the two L long sides of the electrode, and the distance between the centers of the two ports on the same side is 63 cm; four rectangular slots are engraved on the side of the power feed-in port adjacent to the substrate. The length of the groove is 110cm, the width is 1cm, the distance between the two grooves is 2cm, the depth of the groove is 1cm, and it is connected with the inside of the electrode. 40.68MHz excitation frequency power sup...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an electrode capable of achieving a large-area reaction chamber of VHF-PECVD with uniform electric fields, which includes a power electrode plate and a power feed-in port, wherein the power electrode plate is provided with an electrode trough in the position between a power electrode surface and the power electrode feed-in port. The electrode of the invention is capable of achieving the large-area reaction chamber of VHF-PECVD with uniform electric fields, and the invention resolves the uniformity of potential distribution of a large-area electrode plate by optimizing feed-in mode, electrode structure and the like of large-area very high frequency power source, which lays the groundwork for the research and development of thin films deposition and etching systems of the large-area VHF-PECVD. The notch groove electrode changes current distribution on the electrode surface by employing groove distribution of the electrode power feed-in port, and thereby being capable of suppressing logarithm singular point effect of electric potential near the electrode feel-in port.

Description

【Technical field】 [0001] The invention relates to the technical field of thin-film transistor matrix in the field of silicon thin-film solar cells and flat panel displays, in particular to a large-area VHF-PECVD reaction chamber that can obtain a uniform electric field in a plasma-enhanced chemical vapor deposition or plasma etching reaction chamber electrode design. 【Background technique】 [0002] In recent years, it has been reported that the application of very high frequency (VHF) technology to PECVD can increase the deposition rate of thin films, and the research results show that: VHF-PECVD is completely suitable for high-speed deposition of microcrystalline silicon thin films and amorphous silicon thin films. However, the application research of VHF-PECVD is usually carried out in small-scale PECVD reaction chambers, so it cannot be directly applied to large-scale industrial production. RF capacitively coupled parallel plate electrode reaction chamber is widely used ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/505
Inventor 赵颖张晓丹葛洪任慧志许盛之张建军薛俊明魏长春侯国付耿新华熊绍珍
Owner NANKAI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap