Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Polishing apparatus and polishing method

A polishing device and polishing time technology, which is applied in the direction of grinding devices, electrical components, grinding machine tools, etc., can solve the problems of polishing treatment application and influence

Active Publication Date: 2009-07-29
EBARA CORP
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because of the effect of the pad conditioning, the depth of the grooves formed in the surface of the polishing pad and the ratio of the soft layer to the hard layer change over time according to the wear of the polishing pad, thereby imposing a great stress on the polishing process. influences

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing apparatus and polishing method
  • Polishing apparatus and polishing method
  • Polishing apparatus and polishing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0048] The following will refer to Figures 1 to 13B A polishing apparatus according to an embodiment of the present invention will be described. In the respective drawings, the same or corresponding components are denoted by the same or corresponding reference numerals, and description thereof will not be repeated subsequently.

[0049] figure 1 is a plan view showing the overall structure of the polishing apparatus according to the first embodiment of the present invention. Such as figure 1 As shown in , the polishing apparatus has four loading / unloading stations 1, each for receiving a cassette 2 containing (or storing) a plurality of substrates such as semiconductor wafers. The polishing device also has a transfer robot (manipulator) 3 which is arranged on a rail 4 so that the transfer robot 3 can move along the rail 4 to reach the corresponding cassette 2 on each loading / unloading station 1 . The polishing device also has two cleaning units 5 and 6 arranged on the opp...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A polishing apparatus is disclosed, comprising a polishing section configured to polish a substrate, wherein the substrate has a plurality of laminating films including an upper layer and a lower layer; a measurement section configured to measure a thickness of a film formed on the substrate; an interface configured to input a desired thickness of a film formed on a substrate to be polished; an arithmetic unit operable to calculate a polishing rate and an optimal polishing time based on the polishing rate data and the desired thickness by using a weighted average method which weights the polishing rate data on a lately polished substrate. The invention also discloses a polishing method.

Description

technical field [0001] The present invention relates to a polishing apparatus and a polishing method, and more particularly, to a polishing apparatus and a polishing method for polishing (grinding) a substrate such as a semiconductor wafer to a flat mirror finish. Background technique [0002] In recent years, semiconductor devices have become more integrated, and the structure of semiconductor elements has become more complicated. In addition, the number of layers in multilayer interconnect fabrics for logic systems has increased. Therefore, the unevenness on the surface of the semiconductor device is increased, so that the step height on the surface of the semiconductor device tends to become large. This is because, in the manufacturing process of a semiconductor device, a thin film is formed on the semiconductor device, then microprocessing such as forming a pattern or forming a hole is performed on the semiconductor device, and these processings are repeated to form a s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/04H01L21/304B24B37/013
Inventor 佐佐木达也山田青史胜间田好文清水展津野成亮三谷隆
Owner EBARA CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products