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Plasma treatment device

A plasma and processing device technology, applied in the field of plasma processing devices, can solve the problems of reduced productivity of semiconductor devices and unrealistic accumulation of films

Active Publication Date: 2011-12-07
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the above method of removing the deposited film requires a treatment different from the plasma treatment of the wafer, and there is a problem that the productivity of semiconductor devices manufactured from the wafer is lowered.
That is, there is a problem that it is not practical to remove the deposited film on the electrode surface from the viewpoint of productivity.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0067] In the plasma processing apparatus 10 described above, the pressure of the processing space PS is set to 6.67 Pa (50 mTorr), the high-frequency power of 40 MHz is supplied from the high-frequency power supply 22 at 1000 W, and the high-frequency power of 2 MHz is not supplied from the other high-frequency power supply 24 . frequency power, apply a DC voltage of -600V to the upper electrode plate 39 from the DC power supply 41, and set C 4 f 8 gas, Ar gas and N 2 The flow rates are set at 6 sccm, 1000 sccm, and 120 sccm, respectively, and supplied to the processing space PS to generate plasma in the processing space PS. Next, the formation of a deposition film on the surface of the ground ring 47 was observed when the RIE process was continued for 5 minutes.

Embodiment 2

[0073] First, in the plasma processing apparatus 10, except that the high-frequency power of 2 MHz was supplied from another high-frequency power supply 24 at 1000 W, the conditions of the RIE process were set to be the same as in Example 1, and the RIE process was observed for 5 minutes. The case of handling the formation of a buildup film on the surface of the ground ring 47 .

Embodiment 3

[0075] First, in the plasma processing apparatus 10, except that the high-frequency power of 40 MHz was supplied from the high-frequency power supply 22 at 2000 W, the conditions of the RIE process were set to be the same as those in Example 1, and the RIE process was observed after continuing for 5 minutes. case the formation of a buildup film on the surface of the ground ring 47 .

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PUM

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Abstract

A plasma processing apparatus that enables formation of a deposit film on a surface of a grounding electrode to be prevented. A substrate processing chamber has therein a processing space in which plasma processing is carried out on a substrate, an RF electrode that applies radio frequency electrical power into the processing space, a DC electrode that applies a DC voltage into the processing space, and a grounding electrode at least part of which is exposed in the substrate processing chamber. The grounding electrode is disposed in a corner portion formed through intersection of a plurality of internal surfaces in the substrate processing chamber.

Description

technical field [0001] The present invention relates to a plasma processing device, in particular to a plasma processing device with an electrode connected to a DC power supply. Background technique [0002] There is known a parallel plate type plasma processing apparatus having the following components: a substrate processing chamber having a processing space for loading a wafer as a substrate, a lower electrode arranged in the substrate processing chamber and connected to a high-frequency power source, and a lower electrode connected to the lower portion. The upper electrode where the electrodes face each other. In this plasma processing apparatus, a processing gas is introduced into a processing space, and high-frequency power is applied to the processing space between an upper electrode and a lower electrode. Then, when the wafer is carried into the processing space and placed on the lower electrode, the introduced processing gas is converted into plasma by high-frequen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/3065C23F4/00H05H1/00H01J37/32H01J37/00
CPCH01J37/32082H01J37/32532
Inventor 本田昌伸儿玉法明
Owner TOKYO ELECTRON LTD