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Semiconductor device having a contact structure with a contact spacer and method of fabricating the same

A technology of semiconductors and devices, applied in the field of forming contact structures, can solve problems such as reducing yield

Inactive Publication Date: 2007-12-05
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Contact failures such as these lead to reduced yields of semiconductor devices

Method used

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  • Semiconductor device having a contact structure with a contact spacer and method of fabricating the same
  • Semiconductor device having a contact structure with a contact spacer and method of fabricating the same
  • Semiconductor device having a contact structure with a contact spacer and method of fabricating the same

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Embodiment Construction

[0029] Exemplary embodiments of the present disclosure will now be described more fully with reference to the accompanying drawings. This disclosure may, however, be embodied in many different forms and should not be construed as limited to only the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will convey the principles of the disclosure. Fully conveyed to those skilled in the art. In the drawings, like reference numerals designate like elements, and the size and thickness of layers and regions are exaggerated for clarity. It will also be understood that when a layer is referred to as being "on" another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. In the specification, the same reference numerals denote the same elements.

[0030] Referring to FIG. 6, a memory cell array region, eg, a DRAM cell array region, includes a word ...

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PUM

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Abstract

Methods of manufacturing a semiconductor device having reduced susceptibility to void formation between upper metal wiring layers and lower contact pads are provided. According to the methods, an etch shield layer is formed to protect contact pads from subsequent etch processes. Semiconductor devices manufactured according to the methods are also provided.

Description

technical field [0001] The present disclosure relates to methods of fabricating semiconductor devices and devices fabricated according to these methods. In particular, the present disclosure relates to methods of forming contact structures used to connect an active region of a semiconductor device to an upper metal layer. The present disclosure also relates to a semiconductor device having a contact structure produced according to the method. Background technique [0002] Modern semiconductor devices typically include discrete devices such as transistors, resistors and capacitors formed on a semiconductor substrate. Several metal layers may be required in order to interconnect discrete devices to each other and to peripheral devices to form the desired circuit. These metal layers require contact holes to penetrate the interlayer insulating film layers that separate the metal layers. [0003] As the degree of integration of semiconductor devices increases, the size and spa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L21/8242H01L23/522H01L27/108H10B12/00
CPCH01L27/10882H01L27/10808H01L21/76804H01L27/10888H01L27/0207H01L27/10885H01L21/76831H10B12/31H10B12/48H10B12/482H10B12/485H01L21/28
Inventor 张润泽
Owner SAMSUNG ELECTRONICS CO LTD