Long wavelength laser transmitted perpendicular to surface of cavity by using integrated pumping light source

A technology of vertical cavity surface emission and manufacturing method, which is applied in the field of long-wavelength vertical cavity surface emitting lasers, and can solve problems such as device cost, increased packaging difficulty, low laser power, and difficult temperature characteristics.

CN101093931BInactive Publication Date: 2010-11-24INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2010-11-24
Estimated Expiration
Not applicable · inactive patent

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Abstract

The laser device includes a substrate; a Bragg reflector prepared on the substrate; a low limiting layer prepared on the Bragg reflector; a low waveguide layer prepared on the low limiting layer, and band gap wavelength of the low waveguide layer being as indium-gallium-arsenic-phosphor material in 1.2 micron; an active region prepared on the low waveguide layer; an up waveguide layer prepared onthe active region, and band gap wavelength of the up waveguide layer being as indium-gallium-arsenic-phosphor material in 1.2 micron; an up limiting layer prepared on the up waveguide layer; an up Bragg reflector prepared at middle on the up limiting layer; being prepared on the up limiting layer, an ohmic contact layer is located at two sides of the up Bragg reflector; being prepared on the ohmic contact layer, an up electrode is located at two sides of the up Bragg reflector; a low electrode prepared underside of the substrate.
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Description

Long-wavelength vertical-cavity surface-emitting laser with integrated pump light source and manufacturing method technical field The invention is a vertical cavity surface emitting laser (Vertical Cavity Surface Emitting Laser, VCSEL), especially a long-wavelength vertical cavity surface emitting laser integrated with a pump light source (edge ​​emitting laser). Background technique Vertical cavity surface emitting laser (VerticalCavitySurfaceEmittingLaser, VCSEL) is a promising semiconductor laser, it has many advantages: 1) It can be made into a densely arranged two-dimensional laser array. 2) A thin circular beam can be emitted from the direction perpendicular to the substrate, and the coupling efficiency with the optical fiber is high. 3) It can be tested before the chip is understood, which greatly reduces the cost. 4) Good dynamic single-mode performance and wide modulation bandwidth. Because vertical cavity surface emitting lasers have so many features super...

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