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Back lighting imaging device and manufacturing method thereof, semiconductor substrate and imaging device

A technology for imaging devices and backside lighting, applied in semiconductor/solid-state device manufacturing, electrical components, image communications, etc., to prevent the reduction of blue light sensitivity

Inactive Publication Date: 2008-03-26
FUJIFILM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the getter side is likely to become a dark current source, that is, a noise source

Method used

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  • Back lighting imaging device and manufacturing method thereof, semiconductor substrate and imaging device
  • Back lighting imaging device and manufacturing method thereof, semiconductor substrate and imaging device
  • Back lighting imaging device and manufacturing method thereof, semiconductor substrate and imaging device

Examples

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example 1

[0484] Temperature: 300 to 500°C

[0485] Pressure: 100 to 200Pa

[0486] Gas used: Ar / O 2 / H 2 (mixing ratio of 100 / 1 / 1)

[0487] Under the above conditions, oxygen was plasmaized by microwaves. Therefore, oxygen becomes highly active oxygen, and sacrificial oxidation proceeds near the surface of the SOI substrate exposed thereon. Actually, a high-quality oxide film having a film thickness of 10 nm was produced by irradiating microwaves for 150 seconds. Argon (Ar) is an inert carrier gas, and hydrogen is used to facilitate oxidation.

[0488] Since highly active oxygen radicals are also oxidized only in the reaction rate control region, the region up to a film thickness of 10 nm is the region where low-temperature oxidation treatment is performed. When an oxide thin film having a film thickness exceeding 10 nm is formed, since a long-time continuous reaction is required, productivity decreases.

[0489] Special Example 2

[0490] Temperature: 400°C

[0491] Pressure:...

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PUM

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Abstract

The invention provides a back lighting imaging device, a method of fabricating the device, a semiconductor substrate and an imaging device. The back lighting imaging device irradiates light from a back of a p-shaped substrate by which electric charge is generated in the substrate and reads the electric charge to image from the front of the substrate. The device comprises: a n layer which is arranged on both the substrate and closed to the same plane of the front surface of the substrate for accumulating electric charge; a n <+> layer arranged between each n layer and the front surface of the substrate, which has an exposed surface on the front surface of the substrate, as a spill leakage to release the extra charge accumulated in the n layer; a p <+> layer arranged between each n <+> layer and n layer as a spill barrier; and an electrode connected to each exposed surface of the n <+> layer.

Description

[0001] This application is based upon and claims filings on September 20, 2006, October 16, 2006, October 19, 2007, April 17, 2007, April 26, 2007, and May 8, 2007 Priority claims to filed Japanese patent applications 2006-254041, 2006-281544, 2006-285194, 2007-108264, 2007-117051, and 2007-123376, the entire disclosures of which are incorporated herein by reference. technical field [0002] The present invention relates to a backside illuminated imaging device that performs imaging by irradiating light from the backside of a semiconductor substrate to generate charges in the semiconductor substrate based on the light, and reading the charges from the front side of the semiconductor substrate. Background technique [0003] The imaging portion of a general-purpose solid-state imaging device is configured by arranging a plurality of minute photoelectric conversion units including photodiodes in one or two dimensions. Since high-resolution images can be captured by arranging a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L27/148H01L21/822H01L21/84H04N5/335H04N25/00
Inventor 宇家真司永濑正规中桥洋介蜂谷透
Owner FUJIFILM CORP