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A back lighting imaging device and a manufacturing method thereof, a semiconductor chip and an imaging device

A technology of backside lighting and imaging devices, which is applied in semiconductor/solid-state device manufacturing, electrical components, image communication, etc., to achieve the effect of preventing the reduction of blue light sensitivity

Inactive Publication Date: 2009-10-07
FUJIFILM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the getter side is likely to become a dark current source, that is, a noise source

Method used

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  • A back lighting imaging device and a manufacturing method thereof, a semiconductor chip and an imaging device
  • A back lighting imaging device and a manufacturing method thereof, a semiconductor chip and an imaging device
  • A back lighting imaging device and a manufacturing method thereof, a semiconductor chip and an imaging device

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example 1

[0485] Temperature: 300 to 500°C

[0486] Pressure: 100 to 200Pa

[0487] Gas used: Ar / O 2 / H 2 (mixing ratio of 100 / 1 / 1)

[0488]Under the above conditions, oxygen was plasmaized by microwaves. Therefore, oxygen becomes highly active oxygen, and sacrificial oxidation proceeds near the surface of the SOI substrate exposed thereon. Actually, a high-quality oxide film having a film thickness of 10 nm was produced by irradiating microwaves for 150 seconds. Argon (Ar) is an inert carrier gas, and hydrogen is used to facilitate oxidation.

[0489] Since highly active oxygen radicals are also oxidized only in the reaction rate control region, the region up to a film thickness of 10 nm is the region where low-temperature oxidation treatment is performed. When an oxide thin film having a film thickness exceeding 10 nm is formed, since a long-time continuous reaction is required, productivity decreases.

[0490] Special Example 2

[0491] Temperature: 400°C

[0492] Pressure: ...

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PUM

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Abstract

The invention provides a back lighting imaging device and a manufacturing method thereof, a semiconductor chip and an imaging device. The back lighting imaging device generates charge in the chip on the basis of the light through irradiating light to the back of the Rho-type chip and reads the charge from the right side of the chip to form images. The device comprises a first semiconductor layer in the semiconductor chip with the first electrical conductivity and stored charge, a second semiconductor layer which is arranged at the inner side of the back side of the semiconductor chip and which has a second electrical conductivity, the type of which is opposite to that of the first electrical conductivity and also a third semiconductor layer which is arranged between the first semiconductor layer and the second semiconductor layer which has the impurity concentration of 1.0 multiplied by 10 / cm or lower.

Description

[0001] This application is based upon and claims filings on September 20, 2006, October 16, 2006, October 19, 2007, April 17, 2007, April 26, 2007, and May 8, 2007 Priority claims to filed Japanese patent applications 2006-254041, 2006-281544, 2006-285194, 2007-108264, 2007-117051, and 2007-123376, the entire disclosures of which are incorporated herein by reference. technical field [0002] The present invention relates to a backside illuminated imaging device that performs imaging by irradiating light from the backside of a semiconductor substrate to generate charges in the semiconductor substrate based on the light, and reading the charges from the front side of the semiconductor substrate. Background technique [0003] The imaging portion of a general-purpose solid-state imaging device is configured by arranging a plurality of minute photoelectric conversion units including photodiodes in one or two dimensions. Since high-resolution images can be captured by arranging a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L21/84H01L21/265H04N5/335H04N25/00
Inventor 宇家真司永濑正规中桥洋介蜂谷透
Owner FUJIFILM CORP