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Semiconductor device

A technology of semiconductors and wafers, applied in the direction of semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc.

Active Publication Date: 2011-09-28
NXP BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, during its lifetime, the device 1 may be subjected to other temperature cycles, which likewise lead to mechanical stress

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0019] image 3 With figure 2 A comparative view illustrating details (not to scale) of a preferred embodiment of a semiconductor device 100 according to the present invention. In this figure, the undercut 16 is not shown for the sake of simplicity, but it is preferably present. As known per se, and therefore not illustrated, the manufacture of the lead frame 10 begins with a standard solid flat strip, typically about 0.2 mm. On this strip, a row of lead frames is formed by etching; in a later step, the individual lead frames are separated from each other by a sawing process.

[0020] The top surface 15 of the die pad 11 has a first top surface portion 31 on which the die 2 is mounted and a second top surface portion 32 on which the downward bonding wire 5 is attached. The first top surface portion 31, also known as the die attach surface portion, is the central portion of the top surface 15; while the second top surface portion 32, also known as the down bond wire attach ...

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PUM

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Abstract

A semi-conductor device (100) comprises an exposed leadframe (10) with a die pad (11) and a plurality of leads (12). The die pad (11) has a substantially flat bottom surface (14) and a top surface (15). A semi-conductor die (2) is attached to a die attachment portion (31) of the top surface (15). Downbonds (5) connect the die (2) to a downbond attachment portion (32). Standard bonds (4) connect the die (2) to the leads (12). A plastic package (6) encapsulates the die (2), the standard bonds (4) and the downbonds (5). The top surface of the die pad has portions located at different levels, andstep- shaped transitions between two adjacent ones of such portions. At least one of such step- shaped transition (36) is located between the die (2) and the downbonds (5). It has been found that such step-shaped transition provides good protection against downbond failure.

Description

technical field [0001] The present invention generally relates to a semiconductor device in which a semiconductor chip is mounted in a plastic package. Background technique [0002] Such semiconductor devices are well known. The following is a brief description of the general design of such a device. figure 1 A schematic cross-section of the semiconductor device 1 is shown. The device comprises a semiconductor chip 2, also referred to as a "wafer", which includes an integrated circuit (not shown). The device also includes an electrically conductive lead frame 10, typically made of a metal such as copper; the lead frame 10 includes a centrally located die pad 11 and a plurality of internal leads 12 ( figure 1 Only two of them are shown in the sectional view). Die 2 is attached to die pad 11 by adhesive 3, which is typically an electrically and / or thermally conductive adhesive. Typically, the die pad 11 has a quadrilateral shape, often even a square. Different embodiment...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/495
CPCH01L2924/01015H01L2224/83851H01L2924/15153H01L2924/01082H01L2924/0781H01L2224/32245H01L2224/27013H01L24/32H01L2924/01029H01L2224/48091H01L2924/18301H01L2224/85051H01L24/48H01L24/85H01L24/45H01L2224/48599H01L23/3107H01L23/562H01L2924/01079H01L2224/83385H01L2224/48465H01L2224/48247H01L2924/14H01L24/83H01L2924/01033H01L2924/15165H01L2924/01078H01L2924/01014H01L2224/4848H01L2224/48257H01L2224/45144H01L2224/73265H01L2224/83051H01L23/49503H01L2224/2929H01L2224/293H01L2924/00011H01L2924/181H01L24/73H01L2924/00014H01L2924/00012H01L2924/00H01L2924/3512H01L2224/29075H01L2224/85399H01L2224/05599H01L23/28
Inventor 乔斯·J·迪马塞卡杰里·丹威廉·D·范德里
Owner NXP BV