Developing process improving method
A technology of process and developing solution, which is applied in the field of improving the development process to reduce residual pollutants in the nozzle, and can solve the problems of by-product splashing, increased contaminated area, and the impact of the second chip chip, etc.
Inactive Publication Date: 2008-10-15
GRACE SEMICON MFG CORP
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Problems solved by technology
However, as shown in FIG. 1 , it is shown that in the development process, the nozzle 10 sprays the developing solution 14 along the direction of Line-1 to the first chip 12, and pushes the developing solution 14 forward, and a reaction may occur. The by-products are splashed on the nozzle 10, and since the height of the developer liquid level of the nozzle 10 in the spraying direction Line-1 gradually rises, the area of the nozzle 10 itself being polluted will also increase.
Therefore, if the contaminated nozzle is not cleaned and continues to operate, it will affect the second chip and subsequent chips
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The invention provides a method for improving the developing process, which is mainly characterized in that when developer is sprayed on a chip by a nozzle, the distance between the nozzle and the liquid surface of the developer is controlled within 1mm to 2mm at any moment; the nozzle is then cleaned by deionized water for at least 5 seconds; therefore, the probability that the nozzle is polluted by the developer is reduced and further the problem that the yield in developing process of the subsequent chip is reduced is avoided.
Description
Improvement method of development process technical field The invention relates to a method for improving a developing process, in particular to a method for improving a developing process for reducing residual pollutants in nozzles. Background technique The existing development process in the semiconductor industry is to use a row of nozzles of a developer spraying arm to inject developer on the chip, so the developer can be sprayed over a large area at one time to cover the chip, as shown in FIG. 1 . However, as shown in FIG. 1 , it is shown that in the development process, the nozzle 10 sprays the developing solution 14 along the direction of Line-1 to the first chip 12, and pushes the developing solution 14 forward, and a reaction may occur. The by-products splash onto the nozzle 10 , and since the level of the developing liquid in the spraying direction Line-1 of the nozzle 10 gradually rises, the area of the nozzle 10 itself being polluted will also increase. The...
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IPC IPC(8): G03F7/30
Inventor 程蒙陈进
Owner GRACE SEMICON MFG CORP