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Layout method for mask, semiconductor device and method for manufacturing the same

A semiconductor and device technology, applied in the field of mask layout, can solve the problems of different sizes and densities, achieve the effects of simplifying design and manufacturing process, increasing pattern density, and ensuring pattern uniformity

Inactive Publication Date: 2008-11-12
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, various problems may arise due to the difference in size and density of the patterns formed on the substrate of the semiconductor device

Method used

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  • Layout method for mask, semiconductor device and method for manufacturing the same
  • Layout method for mask, semiconductor device and method for manufacturing the same
  • Layout method for mask, semiconductor device and method for manufacturing the same

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Embodiment Construction

[0015] Hereinafter, a layout method of a mask, a semiconductor device, and a manufacturing method thereof according to embodiments of the present invention will be described with reference to the accompanying drawings.

[0016] In the description of the embodiments, it will be understood that when a layer (or film) is referred to as being "on" another layer or substrate, it may be directly on another layer or substrate, or there may also be middle layer. Further, it will also be understood that when a layer is referred to as being 'under' another layer, it can be directly under, and one or more intervening layers may also be present. In addition, it will be understood that when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

[0017] see Figure 1 to Figure 2 , The semiconductor device according to the embodiment may include: a microlens main pattern (not shown) form...

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PUM

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Abstract

A mask layout method, semiconductor device and method for fabricating the same using a mask created according to the subject mask layout method are provided. The semiconductor device can include a microlens main pattern on a substrate and a microlens dummy pattern at a side of the microlens main pattern. The microlens dummy pattern can be formed in plurality using a mask created by the subject mask layout method. According to an embodiment of the subject mask layout method, a microlens dummy pattern can be created by forming a base dummy pattern and removing edge areas from the base dummy pattern. The microlens dummy pattern can be created to have a substantially circular shape. In one embodiment, the substantially circular shape can be an octagon.

Description

technical field [0001] The invention relates to a mask layout method, a semiconductor device and a manufacturing method thereof. Background technique [0002] Generally, a semiconductor device has a multilayer structure, wherein each layer of the multilayer structure is generally formed by a deposition process or a sputtering process, and then patterned by a lithography process. [0003] However, various problems may arise due to differences in size and density of patterns formed on a substrate of a semiconductor device. In order to solve the above-mentioned problems, a method of forming a dummy pattern together with a main pattern is being developed. Contents of the invention [0004] Embodiments of the present invention provide a mask layout method and a semiconductor device using a mask formed according to the title mask layout method and a method of manufacturing the same. [0005] Embodiments of the mask layout method provide microlens dummy patterns. [0006] Acco...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L27/146H01L23/00H01L21/00H01L21/82G03F1/14H01L27/14
CPCG02B3/0056G02B3/0012H01L27/14685H01L27/14621H01L27/14627H01L21/0274H01L21/0337
Inventor 李相熙曹甲焕
Owner DONGBU HITEK CO LTD