Hafnium iron manganese three-doped lithium niobate crystal and method of producing the same
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TAIYUAN UNIV OF TECH
- Publication Date
- 2011-03-23
- Estimated Expiration
- Not applicable · inactive patent
Abstract
Description
technical field
[0001] The invention relates to a lithium niobate crystal in the field of photoelectric crystals and a preparation method thereof, in particular to a photorefractive lithium niobate triple-doped crystal of a photoelectric crystal and a preparation method thereof. Background technique
[0002] Three-dimensional holographic memory will eventually replace the current memory and become a new generation of information storage media. However, the biggest problem facing this product at present is that it cannot find suitable storage materials.
[0003] Li was proposed in CN1277271 patent 1-x Nb 1+y o 3 :Fe m :M n Double-doped crystal, in which M is one of Mg, Zn, In anti-photorefractive doping elements. In this patent, with the doping of M impurities, the monochromatic holographic storage performance of the crystal can be improved, for example, the anti-light scattering ability can be improved, the light scattering threshold can be lowered, and the response ti...