Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for regulating resistivity of polycrystal Fe3O4 thin-film material

A thin-film material and resistivity technology, which is applied in the field of adjusting the resistivity of polycrystalline Fe3O4 thin-film materials, can solve the problems such as the resistivity mismatch between magnetic thin-film materials and semiconductor materials, and achieve the effects of easy control, mild conditions and simple process.

Inactive Publication Date: 2010-06-02
NANKAI UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In order to solve the problem of resistivity mismatch between the magnetic thin film material and the semiconductor material in the process of spin injection, and to meet the actual needs of injecting spin into various semiconductor materials with different resistivities, the present invention provides a new adjustment Polycrystalline Fe 3 o 4 The resistivity method of thin film materials can be easily prepared to obtain resistivity in the range of 4.5×10 3 μΩcm to 1.0×10 11 Polycrystalline Fe with a specific resistivity within μΩcm 3 o 4 film material

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] The DPS-III ultra-high vacuum magnetron sputtering coating machine of the Shenyang Keyi Center of the Chinese Academy of Sciences is used. The iron target with a purity of 99.99% is installed on the target platform, and the vacuum degree of the back and bottom of the sputtering vacuum chamber is optimized before sputtering. In (i.e. less than) 1.0×10 -5 Pa, keep the distance between the substrate and the iron target at 8cm during sputtering, the flow rate of argon gas is 10sccm, the flow rate of oxygen gas is 4.0sccm, the DC power of 150W is set on the iron target, and the substrate is not heated. After the sputtering deposition is completed, turn off the DC power supply of the iron target, continue to maintain the same flow rate of argon and oxygen for half an hour, open the vacuum chamber, and take out the prepared thin film sample. After measurement, the prepared polycrystalline Fe 3 o 4 The resistivity of the film at room temperature (300K) is 3.6×10 5 μΩcm.

Embodiment 2

[0028] Using the DPS-III type ultra-high vacuum magnetron sputtering coating machine of Shenyang Science Instrument Center, Chinese Academy of Sciences, the polycrystalline Fe prepared in Example 1 3 o 4 The film is placed in a vacuum chamber, evacuated to a high vacuum state, a certain pressure of air is introduced into the vacuum chamber, and annealed at the required annealing temperature for a certain period of time. Keep the pressure in the vacuum chamber at a constant value during the annealing process. Cool naturally after annealing, open the vacuum chamber, take out the prepared film sample, and measure the resistivity of the sample at room temperature (300K). The resistivity of the annealed sample under different conditions measured is listed in Table 1;

[0029] Table 1 Fe 3 o 4 Resistivity change of thin film samples when annealed in air:

[0030]

[0031]

Embodiment 3

[0033] Using the DPS-III type ultra-high vacuum magnetron sputtering coating machine of Shenyang Science Instrument Center, Chinese Academy of Sciences, the polycrystalline Fe prepared in Example 1 3 o 4 The film is placed in the vacuum chamber, evacuated to a high vacuum state, and a certain pressure of O is introduced into the vacuum chamber. 2 Gas, annealing at the desired annealing temperature for a certain period of time. Keep the pressure in the vacuum chamber at a constant value during the annealing process. Cool naturally after annealing, open the vacuum chamber, take out the prepared film sample, and measure the resistivity of the sample at room temperature (300K). The resistivity of the annealed sample under different conditions measured is listed in Table 2;

[0034] Table 2Fe 3 o 4 film samples in O 2 Resistivity change during annealing in air:

[0035]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Curie pointaaaaaaaaaa
Login to View More

Abstract

The invention provides a method used for adjusting the resistivity of multi-crystal Fe3O4 film material, in particular to a method which controls the increment of the resistivity of the multi-crystalFe3O4 film material by an annealing method. The method of the invention solves the problem that the resistivity is not matched during the self-rotation injection process and meets the practical requirement of the injection self-rotation in various semiconductor materials with different resistivity. The method of the invention has the advantages of simpleness and feasibility, easily effectively adjusting the resistivity of the multi-crystal Fe3O4 film material, good practicability of the method and being easy for industrialization.

Description

technical field [0001] The invention relates to a kind of regulating polycrystalline Fe 3 o 4 A method for the resistivity of thin film materials, in particular a method for controlling polycrystalline Fe by annealing 3 o 4 A method by which the resistivity of a thin film material is increased or decreased. Background technique [0002] Polycrystalline Fe 3 o 4 The thin film material is a semi-metallic material, which has the advantages of high Curie temperature (850K), simple crystal structure, stable phase structure, oxidation resistance than metal materials, strict chemical ratio and structure under 10nm, and low preparation cost. It has become the preferred material for spintronic devices such as magnetic recording and reading heads, magnetic random access memory, semiconductor spin injection electrodes, etc. [0003] In 1988, French scientist Albert Fert and German scientist Peter Grünberg, Nobel Prize winners in physics, independently discovered the giant magneto...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/12
Inventor 刘晖程雅慧张晓李鲁艳王维华罗晓光
Owner NANKAI UNIV