Method for preparing nano zinc oxide field-effect transistor
A field-effect transistor and nano-zinc oxide technology, which is applied in the field of microelectronics, can solve problems affecting device performance, etc., and achieve the effect of simple process method, simple process and low cost
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example 1
[0023] Example 1 RIE etching to form a ZnO seed layer
[0024] 1) Take ITO conductive glass as the gate electrode, and use ultrasonic cleaning to clean the surface of the sample. The sample was ultrasonically shaken in acetone and absolute ethanol for 15 minutes, and then blow-dried with nitrogen.
[0025] 2) Carry out a positive photolithography process on the ITO glass, photoetch the gate electrode pattern, and then use HCl:H 2 O:HNO 3 = 3:2:1 solution formula to wet-etch ITO glass, and finally use acetone ultrasonic vibration to remove photoresist, such as figure 1 shown.
[0026] 3) Deposit 10-200nm Al on the formed ITO gate pattern by radio frequency (RF) sputtering 2 o 3 As a gate dielectric layer, the preferred thickness is 50nm, such as figure 2 shown.
[0027] 4) After the deposition of the gate dielectric is completed, ultrasonic cleaning is performed with acetone and absolute ethanol, and then blown dry with nitrogen.
[0028] 5) The positive photolithograp...
example 2
[0039] Example 2 Oblique sputtering to form a ZnO seed layer
[0040] 1) Take the ITO conductive glass grid electrode, and use ultrasonic cleaning to clean the surface of the sample. The sample was ultrasonically shaken in acetone and absolute ethanol for 15 minutes, and then blow-dried with nitrogen.
[0041] 2) Carry out a positive photolithography process on the ITO glass, photoetch the gate electrode pattern, and then use HCl:H 2 O:HNO 3 = 3:2:1 solution formula to wet-etch ITO glass, and finally use acetone ultrasonic vibration to remove photoresist, such as figure 1 shown.
[0042] 3) Deposit 200nm Al on the formed ITO gate pattern by radio frequency (RF) sputtering 2 o 3 As a gate dielectric layer, the preferred thickness is 50nm, such as figure 2 shown.
[0043] 4) After the deposition of the gate dielectric is completed, ultrasonic cleaning is performed with acetone and absolute ethanol, and then blown dry with nitrogen.
[0044] 5) The positive photolithogra...
example 3
[0052] Example 3 Formation of source and drain electrodes by nanoimprinting
[0053] 1) Take the ITO conductive glass grid electrode, and use ultrasonic cleaning to clean the surface of the sample. The sample was ultrasonically shaken in acetone and absolute ethanol for 15 minutes, and then blow-dried with nitrogen.
[0054] 2) Carry out a positive photolithography process on the ITO glass, photoetch the gate electrode pattern, and then use HCl:H 2 O:HNO 3 = 3:2:1 solution formula to wet-etch ITO glass, and finally use acetone ultrasonic vibration to remove photoresist, such as figure 1 shown.
[0055] 3) Deposit 200nm Al on the formed ITO gate pattern by radio frequency (RF) sputtering 2 o 3 As a gate dielectric layer, the preferred thickness is 50nm, such as figure 2 shown.
[0056] 4) After the deposition of the gate dielectric is completed, ultrasonic cleaning is performed with acetone and absolute ethanol, and then blown dry with nitrogen.
[0057] 5) Spin-coat 5...
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