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Swing valve and plasma processing device and method for controlling pressure in reaction chamber

A technology of reaction chamber and internal pressure, applied in valve device, flow control, non-electric variable control and other directions, can solve problems such as poor pressure control ability of pendulum valve, and achieve the effect of good pressure control ability

Active Publication Date: 2009-06-10
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0009] The pressure control ability of the pendulum valve is relatively poor, especially at high pressure.

Method used

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  • Swing valve and plasma processing device and method for controlling pressure in reaction chamber
  • Swing valve and plasma processing device and method for controlling pressure in reaction chamber
  • Swing valve and plasma processing device and method for controlling pressure in reaction chamber

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Experimental program
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Effect test

specific Embodiment

[0033] Assuming that in the process of pressure control, the total number of opening steps of the pendulum valve is 1000 steps, the segmented pressure control can be realized by dividing the number of opening steps of the pendulum valve:

[0034] When the number of opening steps of the pendulum valve is greater than 100 steps, the pressure control is realized through the main valve core 4;

[0035] When the number of opening steps of the swing valve is less than or equal to 100 steps, the pressure control is realized through the auxiliary swing valve.

[0036] Segmented pressure control can also be realized by dividing the pressure in the reaction chamber. During the pressure control process, when the flow rate of the intake air in the reaction chamber is 45-55 sccm, such as 45, 50, 55 sccm:

[0037] When the pressure in the reaction chamber is less than 50mT, the pressure control is realized through the main valve core 4;

[0038] When the pressure in the reaction chamber is...

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Abstract

The invention discloses a swing valve, a plasma processing device and a method for controlling the pressure in a reaction cavity. The main valve core of the swing valve is provided with an accessory swing valve. The pumping port of the reaction cavity of the plasma processing device is provided with the swing valve, and the pressure in the reaction cavity is jointly controlled by the swing valve and the accessory swing valve which is arranged in the main valve core. In the process of pressure control, segmented pressure control can be realized by dividing the open step number of the swing valve or by dividing the pressure in the reaction cavity. The swing valve has high pressure control capability, and particularly, the pressure can be controlled more accurately under high pressure.

Description

technical field [0001] The invention relates to a semiconductor processing technology, in particular to a swing valve, a plasma processing device and a method for controlling the pressure in a reaction chamber. Background technique [0002] A pendulum valve is a valve device that regulates pressure according to a set air pressure. In the etching process of semiconductor manufacturing, the pressure stability in the reaction chamber is very important to the uniformity and stability of the etching, and the control of the pressure stability in the reaction chamber is mainly realized by the swing valve. Therefore, the swing valve Valve performance has a critical impact on etch results. [0003] The pendulum valve in the prior art is shown in Figure 1 and Figure 2, including a valve body 1 and a valve core 2, the valve body 1 and the valve core 2 are hinged through a shaft 3, and the valve core 2 rotates around the shaft 3 relative to the valve body 1, Make the pendulum valve op...

Claims

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Application Information

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IPC IPC(8): F16K3/04H01L21/00G05D7/00
Inventor 荣延栋
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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