Semiconductor process chamber, semiconductor process equipment and semiconductor process method

Abstract

The invention provides a semiconductor process chamber which comprises a reaction cavity and a transmission cavity located below the reaction cavity. The reaction cavity is communicated with the transmission cavity through a bottom opening; a base capable of ascending and descending between the reaction cavity and the transmission cavity is arranged in the semiconductor process chamber; a sealing ring and a first elastic sealing cylinder are further arranged in the semiconductor process chamber; the sealing ring and the first elastic sealing cylinder are both arranged below the base and arranged on a lifting shaft of the base in a sleeving mode; the top end of the first elastic sealing cylinder is in sealing connection with the bottom wall of the sealing ring at an inner hole of the sealing ring; the bottom end of the first elastic sealing cylinder is in sealing connection with the bottom wall of the transmission cavity at a through hole, allowing the lifting shaft to penetrate out, in the bottom of the transmission cavity; and when the first elastic sealing cylinder on the base can ascend to the reaction cavity, the sealing ring is driven to ascend through elastic force and seals the bottom opening of the reaction cavity. According to the semiconductor process chamber provided by the invention, the pressure control effect of the reaction cavity can be improved, the process effect of the semiconductor process is improved, the wafer transfer time is shortened, and the film forming efficiency of the semiconductor process is improved. The invention also provides semiconductor process equipment and a semiconductor process method.

Description

technical field [0001] The present invention relates to the field of semiconductor process equipment, in particular to a semiconductor process chamber, a semiconductor process equipment including the semiconductor process chamber, and a semiconductor process method applied to the semiconductor process equipment. Background technique [0002] With the popularization and upgrading of electronic products and the promotion of the international situation, the semiconductor industry has developed rapidly, and the progress of VLSI is particularly prominent. Each foundry is in urgent need of an optimal expansion plan, that is, to maximize the ratio of production capacity to floor area. At present, there are two main solutions to increase production capacity: 1. Increase the film formation rate, that is, increase the number of film-forming substrates per unit time; 2. Increase the number of film-forming substrates at the same time. [0003] However, using the existing single-wafer p...

AI Technical Summary

Problems solved by technology

However, the transfer structure of the large-capacity multi-reaction zone chamber equipment itself leads to the interconnection of each reaction zone, the transmission chamber has a large space and the flow channel in the internal space is irregular, and the airflow cannot be guaranteed to be stable and uniform.

Further lead to unstable pressure control in the process, and ultimately affect the quality of film formation

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