Method for improving SRAM matching degree

A matching degree, MOS tube technology, applied in information storage, static memory, digital memory information, etc., can solve problems affecting SRAM performance and achieve the effect of improving matching degree

Active Publication Date: 2011-10-05
SEMICON MFG INT (SHANGHAI) CORP
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides a method for improving the matching degree of SRAM, and solves the problem in the prior art that the performance of the SRAM is affected due to the mismatch of the corresponding MOS transistors of the SRAM.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for improving SRAM matching degree
  • Method for improving SRAM matching degree
  • Method for improving SRAM matching degree

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0021] refer to figure 1 As shown, an embodiment of the method for improving SRAM matching degree of the present invention comprises the following steps,

[0022] Step s1, providing an SRAM layout;

[0023] Step s2, measuring the electrical parameters of a pair of symmetrical MOS transistors in the SRAM formed according to the SRAM layout;

[0024] Step s3, judging whether the corresponding MOS transistors match according to the electrical parameters, if the symmetrical MOS transistors do not match, execute step s4; if the symmetrical MOS transistors match, execute step s5;

[0025] Step s4, change the layout feature quantity of the layout of the mismatched MOS tube, and return to step s2;

[0026] Step s5, measure the electrical parameters of the next pair of symmetrical MOS transistors, and return to step s3.

[0027] The electrical parameter is the drain saturation current, and the layout characteristic quantity is the gate layout length of the MOS transistor.

[0028]...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for improving the matching degree of an SRAM, which comprises the following steps: measuring electric parameters of a pair of symmetrical MOS tubes in the SRAM formed according to SRAM layout; and determining whether the symmetrical MOS tubes are matched or not according to the electric parameters, if not, changing layout characteristic quantity of the unmatched MOS tube related to the measured electric parameters and repeating the steps until the symmetrical MOS tubes are matched. The method for improving the matching degree of the SRAM can improve the matching degree of the SRAM through changing electric performances of the unmatched tube.

Description

technical field [0001] The invention relates to a method for improving SRAM matching degree. Background technique [0002] Static Random Access Memory (SRAM) is a widely used semiconductor memory nowadays. As long as the static random access memory unit is not powered off, the data will not be lost even without any periodic refresh operation, so we call this storage circuit static. Static random access memory has high access speed and low power consumption, so it is mainly used as cache memory for microprocessors, mainframes, workstations, and many portable devices. [0003] The commonly used static memory unit has a dual-port static memory unit at present, and the unit circuit refers to figure 2 As shown, it includes two back-to-back first inverters and second inverters, that is, the output of the first inverter is connected to the input of the second inverter, and the output of the second inverter is connected to the first inverter The input of the device is connected, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityPatents(China)
IPC IPC(8): G11C11/417G11C29/00
Inventor黄艳黄威森
OwnerSEMICON MFG INT (SHANGHAI) CORP