Nonvolatile memory and manufacturing method thereof

A non-volatile, manufacturing method technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as disadvantages of portable electronic products, and achieve the effect of improving coupling rate and component performance.
CN101593753AActive Publication Date: 2009-12-02HEJIAN TECH SUZHOU
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
HEJIAN TECH SUZHOU
Publication Date
2009-12-02

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Abstract

The invention discloses a nonvolatile memory which comprises a substrate, a plurality of doped regions, a first grid, a conductor layer, a first contact window plug and a dielectric layer, wherein the doped regions are arranged in the substrate; the first grid is arranged on the substrate between two adjacent doped regions; the conductor layer is arranged above the first grid; the first contact window plug is arranged between the first grid and the conductor layer; and the dielectric layer is arranged between the first grid and the first contact window plug.
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Description

technical field

[0001] The present invention relates to a semiconductor component and its manufacturing method, and in particular to a non-volatile memory and its manufacturing method. Background technique

[0002] Non-volatile memory components have become popular in personal computers and electronic devices due to their characteristics of repeatable data storage, reading and erasing, and the advantage that the stored data can still be stored after power failure. A widely used memory component. Non-volatile memory can be subdivided into programmable read-only memory (programmable read-only memory, PROM), erasable programmable read-only memory (erasable programmable ROM, EPROM), electronic erasable programmable read-only memory ( Electrically erasable programmable ROM, EEPROM), mask read-only memory (mask ROM), one-time programmable read-only memory (one-time programmable read-only memory, OTPROM), etc.

[0003] Generally speaking, the coupling ratio of the gate is one of ...

Claims

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