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Exposure mask and manufacturing method of a semiconductor using the same

A semiconductor and mask technology, applied in the field of exposure mask, can solve the problems of reducing pattern contrast, pattern deformation, etc.

Inactive Publication Date: 2009-12-30
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0016] When light is reflected on the mask to pattern the film, the shadowing effect reduces the contrast of the pattern thereby distorting the pattern

Method used

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  • Exposure mask and manufacturing method of a semiconductor using the same
  • Exposure mask and manufacturing method of a semiconductor using the same
  • Exposure mask and manufacturing method of a semiconductor using the same

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Embodiment Construction

[0049] The present invention will be described in detail with reference to the accompanying drawings.

[0050] Such as Figure 3c As shown, an exposure mask according to an embodiment of the present invention includes an absorber 42 , a buffer pattern 50 formed on the absorber 42 as a mask pattern, and a reflector pattern 52 , all of which are formed over a mask substrate 40 .

[0051] In exposure masks, reflective systems are applied rather than patterned systems. As a result, the photoresist film coated on the semiconductor substrate is patterned using the light reflected from the reflector pattern 52 .

[0052] Figures 3a to 3c is a diagram illustrating a method of manufacturing an exposure mask according to an embodiment of the present invention.

[0053] refer to Figure 3a , an absorber 42 for absorbing light, a buffer layer 44 , and a reflector 46 for reflecting light are sequentially formed on the mask substrate 40 .

[0054] The reflector 46 has a multi-layer de...

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Abstract

An exposure mask for EUV comprises an absorber formed over a mask substrate and a reflecting pattern formed over the absorber. The exposure mask for EUV prevents re-absorption of light reflected from a reflector by an absorber pattern to prevent a shadowing effect. As a result, a photoresist pattern reflects the pattern formed in the exposure mask without distortion, thereby obtaining a desired pattern.

Description

technical field [0001] The present invention mainly relates to an exposure mask and a method of manufacturing a semiconductor device using the exposure mask, and more particularly, relates to an exposure mask for extreme ultraviolet radiation (EUV, extreme ultraviolet radiation) applied to a system of reflecting light and exposing light and A method of manufacturing a semiconductor device using the exposure mask. Background technique [0002] As the design size of semiconductor devices decreases, various exposure techniques have been developed. One of these exposure techniques is a method utilizing extreme ultraviolet radiation. [0003] The exposure technique using EUV is inconvenient for a patterning process of a lens using a conventional system because it uses high-energy light having a 13.5 nm band. [0004] That is, since the exposure light source has high energy in a short wavelength band, when the light from the light source is projected onto the exposure mask and t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/14G03F1/00
CPCB82Y10/00G03F1/24B82Y40/00
Inventor 马原光严泰胜
Owner SK HYNIX INC
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