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Display and manufacturing method thereof

A technology for display devices and display areas, applied in identification devices, semiconductor/solid-state device manufacturing, instruments, etc., can solve the problem that the light use efficiency of display devices is not very high, and achieve the effect of eliminating possibility and preventing deterioration

Inactive Publication Date: 2010-06-16
JOLED INC
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  • Application Information

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Problems solved by technology

However, in the display device of the related art, the light emitted from the light emitting layer is not extracted from

Method used

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  • Display and manufacturing method thereof
  • Display and manufacturing method thereof
  • Display and manufacturing method thereof

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Abstract

A method of manufacturing a display not needing a complicated post-process for forming a reflecting mirror film and allowing degradation in an organic light-emitting device to be prevented, and a display. The method of manufacturing a display includes the steps of: forming a plurality of organic light-emitting devices in a display region on a substrate to form a light-emitting panel; forming projection-shaped reflection elements corresponding to the plurality of organic light-emitting devices, respectively, on a base to form a reflector; forming an adhesive layer along an outer edge of the light-emitting panel; and bonding the light-emitting panel and the reflector together with the adhesive layer in a vacuum atmosphere, thereby to form a vacuum layer in a space between the light-emittingpanel and the reflector.

Description

technical field [0001] The present invention relates to a display device including a reflector for improving luminance on a light extraction side of a light emitting panel using an organic light emitting device (organic EL (Electro Luminescence) device) and a method of manufacturing the same. Background technique [0002] A self-luminous device such as an organic light-emitting device sequentially includes a first electrode on a substrate, a layer including a light-emitting layer, and a second electrode, and electron vacancies are generated in the light-emitting layer when a DC voltage is applied between the first electrode and the second electrode. Holes recombine to emit light. The emitted light may be extracted from the side closer to the first electrode and the substrate, or the emitted light may be extracted from the side closer to the second electrode (that is, from a circuit including a TFT (Thin Film Transistor) or wiring arranged therein to increase The side of the...

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Application Information

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IPC IPC(8): H01L21/82H01L21/56H01L27/32H01L23/28G09F9/33
CPCH01L51/5237H01L51/5271H01L51/5284H10K50/846H10K50/841H10K50/856H10K50/844H10K50/865H10K50/84
Inventor 田中洋志堀和仁
Owner JOLED INC