Frequency-multiplier klystron and manufacture method thereof

A klystron, frequency doubling technology, applied in the manufacture of klystrons, electron tubes with velocity/density modulation electron flow, discharge tubes/lamps, etc. The effect of octave bandwidth, high power capacity, good spectral purity

Inactive Publication Date: 2010-07-07
INST OF ELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, the output power of solid-state frequency doubling devices is generally less than 100mW, and the frequency doubling gain and efficiency are very low

Method used

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  • Frequency-multiplier klystron and manufacture method thereof
  • Frequency-multiplier klystron and manufacture method thereof
  • Frequency-multiplier klystron and manufacture method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0039] Manufacture a frequency multiplier klystron of Ku band (17900MHz), index as shown in table I:

[0040] Table I Technical Requirements

[0041] Output frequency

17900MHz±10MHz

output peak power

≥30kW

multiplier gain

≥45dB

[0042] Output frequency

17900MHz±10MHz

efficiency

≥10％

pulse high voltage

31.5~33kV

Ratio to other second harmonic amplitudes

≤-25dB

[0043]1). Design the components and the whole tube. Since the frequency nf=17900±10MHz of the output microwave signal, the multiplier gain≥45dB and the peak output power≥30kW, in order to increase the output power as much as possible, the minimum value n=2 is selected for n, so the input frequency f=8950±5MHz. It can be obtained from the multiplier gain and output power: the input power needs to be ≤1W. This is a double-frequency klystron from X-band to Ku-band. The electronic injection channel is the same as that of ordi...

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PUM

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Abstract

The invention discloses a frequency-multiplier klystron and a manufacture method thereof, relating to the technique of electron tubes. A microwave actuating signal with the frequency of f is used as an input signal; electron beams are in manual action with multiple resonant cavities of the conventional klystron in vacuum; ultraharmonics components in the Fourier spectrum of the electron beams are obviously increased after good cybotaxis is achieved; an output structure adopts the output structure of a wave band where frequency nf is positioned or utilizes the higher order mode of the conventional structure; the ultraharmonics components of the frequency nf, namely, the input frequency f and the output frequency nf, are derived from the electron beams in high cybotaxis so that the microwave small signal is amplified and the frequency is multiplied to nf from f strictly in integer multiples. The method of the invention is simple and easy to implement, and the manufactured frequency-multiplier klystron can keep comparative frequency multiplication grain, good spectrum purity, wider absolute frequency multiplication bandwidth and higher power capability.

Description

technical field [0001] The invention relates to the technical field of electric vacuum devices, and relates to a frequency-multiplier klystron of a new tube type in microwave electric vacuum devices and a manufacturing method thereof. Background technique [0002] The function of the ordinary klystron is to amplify the small microwave signal, and the frequency f is strictly kept unchanged. Among the devices of microwave electric vacuum amplification type, klystron is characterized by high output microwave power, high gain, relatively narrow frequency band and pure output signal spectrum. Practice has shown that when f is above the Ka band, because the high-frequency structure is getting smaller and the electron beam channel is getting thinner, the manufacturing difficulty of ordinary klystrons is greatly increased, and the power capacity is greatly reduced. The function of the frequency-multiplier klystron is to amplify the microwave small signal, and at the same time, the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J25/10H01J23/18H01J23/36H01J9/00H01J9/42
Inventor 范俊杰
Owner INST OF ELECTRONICS CHINESE ACAD OF SCI
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