Method for improving performance of lead-free ferroelectric film and lead-free ferroelectric film prepared by same
A ferroelectric thin film, lead-free ferroelectric technology, applied in the field of lead-free ferroelectric thin film, can solve the problems of insignificant effect, influence of thin film performance, difficult control, etc.
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Embodiment 1
[0028] (1), with electronic balance, according to the mol ratio of Bi and Nd be 3.15: 0.85 to take by weighing bismuth nitrate (excessive 4%) 1.6051g and neodymium acetate 0.2734g respectively, then add glacial acetic acid solvent, magnetically stir at normal temperature to complete dissolved to form a mixed solution of bismuth nitrate and neodymium acetate. According to the molar ratio of Bi, Nd and Ti being 3.15:0.85:3, weigh 1.0313 g of butyl titanate, slowly add it to the above mixed solution, then add glacial acetic acid and ethylene glycol methyl ether solvent (the molar ratio of which is 1 : 1), continue to stir for 2h to obtain 20ml of 0.05mol / L precursor solution, after standing for 7 days, filter to obtain clear and transparent lavender Bi 3.15 Nd 0.85 Ti 3 o 12 Precursor solution.
[0029] Coating the precursor solution on Pt / Ti / SiO 2 On the / Si substrate, adopt the spin coating process, use the homogenizer, first spin the glue at a low speed, the speed is 500r...
Embodiment 2
[0032] (1) To prepare a lead-free ferroelectric thin film, the steps are the same as in Example 1.
[0033] (2), using the gamma rays produced by the decay of cobalt 60 as the irradiation source, the energy of the rays is 1.33MeV, and at room temperature, the prepared neodymium-doped bismuth titanate lead-free ferroelectric thin film is irradiated, and the total irradiation dose It is 40 Mrad. After irradiation, a ferroelectric thin film with reduced leakage current is obtained.
Embodiment 3
[0035] (1) To prepare a lead-free ferroelectric thin film, the steps are the same as in Example 1.
[0036] (2), using the gamma rays produced by the decay of cobalt 60 as the irradiation source, the energy of the rays is 1.33MeV, and at room temperature, the prepared neodymium-doped bismuth titanate lead-free ferroelectric thin film is irradiated, and the total irradiation dose It is 70 Mrad. After irradiation, a ferroelectric thin film with reduced leakage current is obtained.
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