Method for measuring current amplification factor of bipolar transistor

Abstract

The invention provides a method for measuring the current amplification factor of a bipolar transistor. Test probes for testing are selected from a probe card; the test probes are connected with a tester, probe-connecting points corresponding to the like test probes on the probe card are connected with tester-connecting points through wires, and the wires are straightly connected with the probe-connecting points and the tester-connecting points, and are not entangled; the test probes are contacted with the emitter and the collector of the bipolar transistor; the tester and the probe card apply voltage on the emitter E and the collector C of the bipolar transistor, the tester real-timely measures emitter current IE, collector current IC and base current IB under each voltage value applied on the emitter E, and the current amplification factor is obtained according to the obtained collector current IC and base current IB. The method can accurately measure the current amplification factor of a bipolar transistor with a high current amplification factor.

Description

A Method for Measuring Current Amplification Factor of Bipolar Transistor technical field The invention relates to the field of integrated circuit testing, in particular to a method for measuring the current amplification factor of a bipolar transistor. Background technique Bipolar transistors have been widely used in broadcasting, television, communications, radar, electronic computers, automatic control devices, electronic instruments, household appliances, etc. due to their advantages such as small size, light weight, low power consumption, long life, and high reliability. field. There are two basic structures of bipolar transistors: PNP type and NPN type. Figure 1 is a structural diagram of an NPN bipolar transistor, which is composed of two N-type semiconductors sandwiching a P-type semiconductor. It can be seen from Figure 1 that the PN junction formed between the emitter region and the base region is called the emitter junction, and the PN junction formed between...

AI Technical Summary

Problems solved by technology

The technical problem to be solved by the present invention is to provide a method for measuring the current amplification factor of a bipolar transistor, so as to solve the problem that the current amplification factor measurement method of the prior art often fails when measuring the current amplification factor of a bipolar transistor with a large current amplification factor. problem with getting wrong results

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