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Forming method of copper film

A copper thin film and annealing technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as wafer warpage deformation, and achieve the effect of reducing tensile stress and improving warpage deformation

Inactive Publication Date: 2012-01-25
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] What the present invention aims to solve is the problem of warping and deformation of the wafer caused by the ultra-thick metal process in the prior art

Method used

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  • Forming method of copper film
  • Forming method of copper film
  • Forming method of copper film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0016] refer to figure 1 Shown, a kind of embodiment of the formation method of copper thin film of the present invention comprises:

[0017] Step s1, performing a first electroplating step on the surface where a copper film needs to be formed to form a copper film of a first thickness;

[0018] Step s2, performing a first annealing step on the formed copper film of the first thickness;

[0019] Step s3, on the surface of the formed copper film, perform a second electroplating step to continue forming the copper film until the required thickness of the copper film is reached;

[0020] In step s4, a second annealing step is performed on the formed copper thin film.

[0021] Wherein, the electroplating conditions of the first electroplating step and the second electroplating step are the same.

[0022] The method for forming the above-mentioned copper thin film will be further described below through a specific process example.

[0023] refer to Figure 2a As shown, the sub...

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Abstract

The invention relates to a forming method of a copper film, comprising the following steps of implementing a first electroplating step to form the copper film with a first thickness on a surface needing to form the copper film; implementing a first annealing step on the formed copper film with the first thickness; implementing a second electrodeposition step to continuatively form a copper film on the surface of the formed copper film until reaching the required thickness of the formed copper film; and implementing a second annealing step on the formed copper film, wherein the first electroplating step has the same conditions as the second electroplating step. The invention has the advantage that the forming method of the copper film improves the condition of warpage deformation of wafers.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a copper thin film in the subsequent process of semiconductor manufacturing. Background technique [0002] Currently, devices in a mixed signal radio frequency (MS / RF) circuit need to be applied to an ultra thick metal (UTM, Ultra Thick Metal) process. For example, a copper film with a thickness of eg about 3 μm is formed by an electro-copper plating (ECP, Electro-Copper Plating) process. The copper electroplating process generally includes: forming a copper film with a designed thickness by electroplating on the surface where the copper film needs to be formed, and then performing annealing. [0003] More information related to the above copper electroplating process can also be found in, for example, the Chinese patent application with application number 200580019070.0. [0004] However, with the widespread application of large-size wafers, the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768C25D5/10C25D5/50
Inventor 张弓
Owner SEMICON MFG INT (SHANGHAI) CORP