System and method for manufacturing polycrystalline ingots
A polycrystalline ingot and structured technology, which is applied in the field of polycrystalline ingot manufacturing technology, can solve the problems of long time and low production efficiency in the polycrystalline ingot manufacturing process, reduce the time of directional solidification and cooling processes, and improve production efficiency , the effect of improving crystal quality
Active Publication Date: 2013-01-16
王敬
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
It can be seen that the manufacturing process of the entire polycrystalline ingot takes too long and the production efficiency is low
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0044] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.
[0045] image 3 A schematic structural diagram of a polycrystalline silicon ingot manufacturing system 100 according to an embodiment of the present invention is shown. The system 100 for manufacturing polycrystalline ingots includes: an upper furnace body 101; a lower furnace body 102, the lower furnace body 102 cooperates with the upper furnace body 101 to form a furnace body space 104; a crucible 1, the crucible 1 is set Within the lower furnace body 102 and configured to accommodate a feed material (not shown); at least one heater f...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a system for manufacturing polycrystalline ingots, which comprises an upper furnace body, a lower furnace body, a crucible, at least one heater, a crucible holder, a crucible support, a heat insulating part and a heat exchange unit, wherein the crucible is arranged in a furnace space and is arranged to accommodate feed; the at least one heater is used heating the crucible and melting the feed accommodated in the crucible; the crucible holder is used for holding the crucible; the crucible holder accommodating the crucible is arranged on the crucible support; the heat insulating part is accommodated in the furnace space and is arranged in a manner of longitudinally moving relative to the crucible; and the heat exchange unit is used for controlling the dissipation of the heat from the bottom of the crucible, and a flow path for heat dissipation is formed below the crucible support in a polycrystalline ingot solidification and / or cooling process. The invention alsodiscloses a method for manufacturing the polycrystalline ingots by directional solidification. When the system and the method are used, the quality of the polycrystalline ingots can be guaranteed andthe production efficiency of the polycrystalline ingots can be improved.
Description
technical field [0001] The invention relates to a manufacturing process of a polycrystalline ingot, in particular to a system for manufacturing a polycrystalline ingot and a method for manufacturing a polycrystalline ingot by directional solidification. Background technique [0002] In the existing manufacturing process of silicon wafers for solar cells, it is usually necessary to square the single crystal or polycrystalline ingot first. Thereafter, the squared single crystal or polycrystalline ingot is polished or acid-etched to clean the surface and wire-sliced, and then cleaned to obtain the silicon wafer for solar cells. Therefore, it is necessary to provide a manufacturing device and equipment for manufacturing polycrystalline ingots. The existing polycrystalline ingot process flow is as follows: first, charge the material; then carry out vacuum heating and chemical transformation, and after the material is completely melted, it is directional solidified. During this p...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): C30B28/06C30B29/06C01B33/021
Inventor 王敬
Owner 王敬