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Method and system for establishing diffused resistor voltage coefficient extraction and simulation model

A technology of voltage coefficient and simulation model, applied in the measurement of resistance/reactance/impedance, electrical digital data processing, measurement of electrical variables, etc., can solve problems such as errors and inconvenience for designers to use

Active Publication Date: 2010-11-24
BCD (SHANGHAI) MICRO ELECTRONICS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The second is to establish the resistance model and Symbol (symbol) in sections, that is, a model and a Symbol correspond to a certain width range, which greatly reduces the deviation of the voltage coefficient and impr

Method used

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  • Method and system for establishing diffused resistor voltage coefficient extraction and simulation model
  • Method and system for establishing diffused resistor voltage coefficient extraction and simulation model
  • Method and system for establishing diffused resistor voltage coefficient extraction and simulation model

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Embodiment Construction

[0037] The purpose of the present invention is to provide a method and system for extracting the voltage coefficient of diffusion resistance and establishing a simulation model, so as to realize that one symbol corresponds to multiple resistance models, which is convenient for designers to use.

[0038] In order to facilitate the understanding of those skilled in the art, the specific implementation process of the method and system for extracting the voltage coefficient of diffusion resistance and establishing the simulation model will be described in detail below with reference to the accompanying drawings.

[0039] see figure 1 , which is a flow chart of the method for extracting the voltage coefficient of diffusion resistance and establishing a simulation model according to the embodiment of the present invention.

[0040] The method for extracting the voltage coefficient of diffusion resistance and establishing a simulation model described in the embodiment of the present ...

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Abstract

The invention relates to a method for establishing a diffused resistor voltage coefficient extraction and simulation model. The method comprises the following steps of: manufacturing a plurality of testing resistors with the same length and different widths; placing all the testing resistors at the same temperature; scanning the testing resistors sequentially by using the same voltage; measuring the corresponding current values; calculating the resistance values of the testing resistors; extracting the voltage coefficients of the testing resistors with different widths one by one; segmentallyestablishing a plurality of resistor models; and corresponding to the plurality of resistor models by using one symbol. The method and a system for establishing the diffused resistor voltage coefficient extraction and simulation model are used for realizing that one symbol can correspond to the plurality of resistor models, and are convenient for designers to use the method and the system.

Description

technical field [0001] The invention relates to the field of resistance, in particular to a method and system for extracting the voltage coefficient of diffusion resistance and establishing a simulation model. Background technique [0002] Usually, a resistance model will have a voltage coefficient when it is described, and this coefficient characterizes the magnitude of the change of the resistance value of the resistance with the voltage. In order to facilitate the application of the designer, the voltage coefficients provided are uniform and representative. However, for resistors with low doping concentration, such as NW (N-type well resistor) resistors, the voltage coefficients of different widths are not consistent, especially for resistors with relatively small resistor widths, the voltage coefficients vary greatly. [0003] Currently commonly used model extraction methods are: [0004] One is to use a unified voltage coefficient resistance model to characterize devi...

Claims

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Application Information

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IPC IPC(8): G06F17/50G01R27/14
Inventor 姜艳胡林辉
Owner BCD (SHANGHAI) MICRO ELECTRONICS LTD
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