Unlock instant, AI-driven research and patent intelligence for your innovation.

Controller for one type of nand flash memory for emulating another type of nand flash memory

A technology of controllers and flash memory devices, applied in the field of NAND flash memory devices (flash memory devices), can solve problems such as not teaching SBC data writing

Inactive Publication Date: 2011-01-12
SANDISK IL
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the prior art does not teach writing SBC data into MBC flash memory devices as regular MBC data, or reading SBC data from MBC data

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Controller for one type of nand flash memory for emulating another type of nand flash memory
  • Controller for one type of nand flash memory for emulating another type of nand flash memory
  • Controller for one type of nand flash memory for emulating another type of nand flash memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The claims will be better understood by reference to this detailed description of example embodiments of the invention. This detailed description is not intended to limit the scope of the invention but to provide an example.

[0024] As mentioned above, NAND flash memory devices are designed to store data in separately processed pages. Depending on the type of operation initiated by the host device (i.e., writing host data to, reading host data from, or erasing host data from the flash device), "separately processed pages" may refer to "Separately writable" or "separately readable" pages. When it comes to "erase" operations, data is erased in blocks, where each block consists of several pages. The size of the "page" and the size of the block depend on the type of NAND flash memory device, and as mentioned above, it is not easy to handle various sizes of data pages by the same flash memory device, because usually NAND flash memory devices are designed or at least optim...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A controller for a multiple bit per cell NAND flash memory device that emulates a single bit per cell NAND flash memory device. The controller may include a host NAND interface to receive host data from a NAND host device, and a data aggregator for aggregating the host data with complementary data, to thereby create device data that is storable in a device page of an array of NAND flash memory cells of the NAND flash memory device. After creating the device data the controller writes the device data into a device page of the NAND f.ash memory cells. The controller also includes a data parser to parse host data from device data when data read operations are executed by the controller. If required, the controller uses the data parser to parse complementary data from device data to create device data when data writing operations are executed by the controller.

Description

technical field [0001] The present disclosure relates generally to flash memory devices, and more particularly to emulating one type of NAND flash memory device, such as a Multiple Bit per Cell ("MBC") flash memory device, by another type of NAND flash memory device (eg, Single Bit per Cell ("SBC") flash memory devices). Background technique [0002] Flash memory devices, a type of non-volatile memory device, have been known for many years. A flash memory device includes an array of memory cells, where each memory cell is implemented by a semiconductor transistor typically having a floating gate region, a drain region, and a source region. A memory cell can have two or more different states achieved by controlling the amount of charge stored in the floating gate. That is, each state is associated with a different amount of charge stored within the floating gate. In order to actually use a memory cell, each of its states is associated with a binary value. [0003] One typ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G11C16/10
CPCG11C16/10G06F12/0246G06F13/14G11C16/0483G11C16/08G11C16/26
Inventor 沙哈·巴-奥尔阿朗·马库奥里·斯特恩丹·英巴
Owner SANDISK IL