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Polymer pen lithography

A technology of elastomeric polymer and composition, applied in the direction of nanotechnology, nanotechnology, photolithography process of pattern surface, etc., can solve the problems of fragile and expensive two-dimensional cantilever array, etc.

Active Publication Date: 2014-01-01
NORTHWESTERN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The limitations of DPN are: 1) the inability to easily and quickly work between micron and nanometer length scales in a single experiment (typically, either optimize sharp tips to produce nanoscale features, or use blunt tips to produce micron scales of) (24); and 2) require fragile and expensive 2D cantilever arrays for large-area patterning

Method used

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  • Polymer pen lithography
  • Polymer pen lithography
  • Polymer pen lithography

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0076] Preparation of the polymer pen array master:

[0077] Shipley 1805 (MicroChem, Inc.) photoresist was spin-coated on gold thin film substrates (10 nm Cr adhesion layer containing 100 nm Au thermally evaporated on pre-cleaned oxidized Si wafers). Square well arrays were fabricated by photolithography using a chromium mask. The photoresist pattern was developed in MF319 developer solution (MicroChem, Inc.), and then developed in O 2 Plasma exposure for 30 seconds (200 mTorr) to remove the remaining organic layer. Subsequently, the substrates were respectively placed in gold (Type TFA, Transene) and chromium (Type 1020, Transene) etching solutions. A thorough rinse with MiliQ water is required after each etching step to clean the surface. The photoresist was subsequently rinsed away with acetone to expose the gold pattern. The gold-patterned substrate was placed in KOH etching solution (30% KOH in H 2 O solution:IPA (4:1 v / v)) for about 25 minutes with vigorous stirr...

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Abstract

The present invention relates to a method of printing indicia on a substrate using an array of tips comprising an elastomeric, compressible polymer. Tip arrays can be prepared using conventional photolithography methods, and can be tailored to have any desired number and / or arrangement of tips. Many copies of a pattern (eg, greater than 15,000, or greater than 11,000,000) can be produced in parallel in as little as 40 minutes.

Description

[0001] Cross References to Related Applications [0002] This application claims U.S. Patent Provisional Application No. 61 / 047,910, filed April 25, 2008, U.S. Patent Provisional Application No. 61 / 049,679, filed May 1, 2008, and 2008 Priority to US Patent Provisional Application No. 61 / 076,199, filed June 27, the entire contents of which are incorporated herein by reference. [0003] Statement of Government Interest [0004] This invention was made with US government support under National Science Foundation (NSF-NSEC) Grant No. EEC-0647560 and National Cancer Institute Grant No. 5 U54 CA 119341. The government has certain rights in this invention. Background technique [0005] Lithography is used in many areas of modern science and technology, including the production of integrated circuits, information storage devices, display screens, microelectromechanical systems (MEMS), miniaturized sensors, microfluidic devices, biochips, photonic bandgap structures, and diffraction ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/022
CPCB82Y10/00G03F7/0002B82Y40/00Y10S977/856Y10S977/874Y10S977/878Y10S977/887Y10S977/888Y10S977/902B29C33/38B29C59/02B82Y30/00
Inventor 查德·A·米尔金霍峰蔚郑子健郑耿峰
Owner NORTHWESTERN UNIV