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Preparation method of inorganic semiconductor cadmium selenide nanotube structure

A technology of inorganic semiconductor and cadmium selenide is applied in the field of inorganic semiconductor cadmium selenide nanotube structure and preparation thereof, and achieves the effects of simple experimental equipment, simple and easy experimental operation, and uniform morphology.

Active Publication Date: 2012-07-04
CHINA TIANCHEN ENG +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above methods can only synthesize relatively simple cadmium selenide nanostructures such as quantum dots, nanowires, and multi-armed rods.

Method used

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  • Preparation method of inorganic semiconductor cadmium selenide nanotube structure
  • Preparation method of inorganic semiconductor cadmium selenide nanotube structure
  • Preparation method of inorganic semiconductor cadmium selenide nanotube structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Place perylene powder, cadmium selenide powder and silicon chip in the quartz tube of the tube furnace in sequence according to the flow direction of the air flow, wherein the silicon chip is fixed on the upper side of the inner wall with high temperature resistant glue, and the air flow is nitrogen to be sent into the quartz tube; Nitrogen gas is passed into the quartz tube at a flow rate of 120 ml / min. When the quartz tube is completely in an inert gas atmosphere, while maintaining the inert gas flow, control the temperature of the tube furnace from 30 ° C to 900 ° C within 30 minutes and The temperature is maintained at this temperature for 40 minutes to fully proceed with the preparation of the nanotube structure. After completion, the temperature is naturally cooled to obtain an inorganic semiconductor cadmium selenide nanotube structure on the basal surface of the silicon wafer. The distance between the perylene powder and the mouth of the tube furnace is 1 cm, the...

Embodiment 2

[0042] Place perylene powder and cadmium selenide powder successively on the inner wall of the quartz tube of the tube furnace according to the flow direction of the air flow and fix the silicon chip on the upper side of the inner wall, and the air flow is nitrogen to be sent into the quartz tube; Flow rate of 140 ml / min into nitrogen, when the quartz tube is completely in an inert gas atmosphere, while maintaining the inert gas flow, control the temperature of the tube furnace from 30°C to 880°C within 40 minutes and keep the temperature at this temperature 30 minutes to make the preparation of the nanotube structure fully proceed, and then naturally cool down to obtain the inorganic semiconductor cadmium selenide nanotube structure on the basal surface of the silicon wafer. The distance between the perylene powder and the mouth of the tube furnace is 2 cm, the cadmium selenide powder is placed in the middle of the inner wall of the quartz tube, and the silicon wafer is 21 cm ...

Embodiment 3

[0050] Place perylene powder and cadmium selenide powder successively on the inner wall of the quartz tube of the tube furnace according to the flow direction of the air flow and fix the silicon chip on the upper side of the inner wall, and the air flow is nitrogen to be sent into the quartz tube; The flow rate of 100 ml / min is fed with nitrogen gas. When the quartz tube is completely in an inert gas atmosphere, while maintaining the inert gas flow, control the temperature of the tube furnace from 30 ° C to 930 ° C within 50 minutes and keep the temperature at this temperature 60 minutes to make the preparation of the nanotube structure fully proceed, and then naturally cool down to obtain the inorganic semiconductor cadmium selenide nanotube structure on the basal surface of the silicon wafer. The distance between the perylene powder and the mouth of the tube furnace is 1.5 cm, the cadmium selenide powder is placed in the middle of the inner wall of the quartz tube, and the si...

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Abstract

The invention discloses a preparation method of an inorganic semiconductor cadmium selenide nanotube structure. The method comprises the following steps of: (1) placing perylene powder, cadmium selenide powder and a silicon wafer in a quartz tube of a tubular furnace sequentially according to the flowing direction of an air flow, wherein the silicon wafer is fixed on the upper side of the inner wall with a high-temperature resistant adhesive, and the air flow is inert gas to be introduced into the quartz tube; and (2) introducing the inert gas into the quartz tube, keeping flowing of the inert gas when the quartz tube is completely in the atmosphere of the inert gas, controlling the tubular furnace to be heated to a temperature required for preparing the nanotube structure according to a preset velocity, keeping the constant temperature in a preset time to ensure that the reaction is performed sufficiently, and naturally cooling and reducing the temperature to obtain the inorganic semiconductor cadmium selenide nanotube structure on the substrate of the silicon wafer. A novel CdSe nanotube material with uniform appearance can be prepared by adopting the method, and has excellent cathode ray luminescence performance.

Description

technical field [0001] The invention relates to a nanotube structure and a preparation method thereof, in particular to an inorganic semiconductor cadmium selenide nanotube structure and a preparation method thereof. Background technique [0002] It is well known that the properties of nanomaterials are closely related to their morphology. Under specific complex shapes, nanomaterials will exhibit singular optical and electrical properties. Therefore, scientists are trying to use various methods to prepare nanomaterials with complex and special shapes. Nanotubes are one of the most intensively studied shapes of nanomaterials. Existing research results show that nanotube materials can be used as important components and connection components in optoelectronic nanodevices such as single-molecule transistors, electron emission flat panel displays, and chemical sensors. The preparation methods of nanotube materials include self-assembly method, template method, solvothermal me...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/04B82Y40/00
Inventor 张蒙钱震宋辉王志文张媛刘文王海国刘楠梁莹袁学民孙世谦曹振岩孙艳行
Owner CHINA TIANCHEN ENG