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Chemical vapor deposition apparatus and a control method thereof

A technology of chemical vapor deposition and controller, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve problems such as temperature detection and influence of clogged detection tubes

Inactive Publication Date: 2011-06-29
LIGADP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, some process gas may flow back into the detection tube during the process, because the detection tube is in communication with the process chamber
If the process gas is deposited on the inner wall of the detection tube, it may block the detection tube or affect the temperature detection

Method used

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  • Chemical vapor deposition apparatus and a control method thereof
  • Chemical vapor deposition apparatus and a control method thereof
  • Chemical vapor deposition apparatus and a control method thereof

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Embodiment Construction

[0018] Reference will now be made in detail to the preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like parts throughout. The embodiments are described below in order to explain the present invention by referring to the figures.

[0019] Hereinafter, a chemical vapor deposition (CVD) apparatus will be described according to a first exemplary embodiment of the present invention.

[0020] figure 1 A sectional view showing the CVD apparatus of the first exemplary embodiment of the present invention. Such as figure 1 As shown, a metal organic chemical vapor deposition (MOCVD) apparatus in this embodiment includes a chamber 100 forming an exterior. In addition, the process gas supply unit 110 is disposed inside the upper portion of the chamber 100 and injects group III and group V gases into the chamber 100 .

[0021] The process gas supply unit 110 may be implemented by a shower he...

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Abstract

Disclosed are a chemical vapor deposition (CVD) apparatus and a control method thereof, wherein the CVD apparatus includes: a chamber; a susceptor which is provided inside the chamber and on which a substrate is placed; a process-gas supplying unit which is placed above the susceptor and supplies process gas; a sensing tube which is placed above the susceptor and opened toward the susceptor or the substrate; a temperature sensing member which is installed at a side of the sensing tube and senses temperature of the susceptor or substrate through the sensing tube; and a purge-gas supplying unit which injects purge gas into the sensing tube. According to the chemical vapor deposition (CVD) apparatus and the control method thereof, purge gas is injected so as to effectively prevent process gas from being introduced in the sensing tube. Therefore, it is possible to enlarge an outlet of the sensing tube, so that even a pyrophotometer employs an object lens having a low numerical aperture, its performance is enough to sense the temperature correctly.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of Korean Patent Application No. 10-2010-0011141 filed on February 5, 2010 and Korean Patent Application No. 10-2009-0131039 filed on December 24, 2009, and incorporates the entire disclosure thereof Incorporated herein by reference. technical field [0003] The present invention provides a chemical vapor deposition (CVD) device and a control method thereof, and more particularly relates to a CVD device provided with a detection tube and a control method thereof, wherein a thermometer can detect a susceptor and a substrate through the detection tube without contact temperature. Background technique [0004] Chemical vapor deposition (CVD) devices are devices used to deposit thin films on wafers. Specifically, a Metal Organic Chemical Vapor Deposition (MOCVD) apparatus is an apparatus for depositing a gallium nitride thin film on a substrate by supplying Group III and Group V compou...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44
CPCC23C16/303C23C16/52
Inventor 陈周
Owner LIGADP