Semiconductor device and semiconductor technique thereof
A semiconductor and process technology, applied in the field of semiconductor devices and semiconductor processes, can solve problems such as short circuits
Inactive Publication Date: 2011-07-20
ADVANCED SEMICON ENG INC
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
The protection layer 414 is necessary; otherwise, the bumps 42 may be electrically connected to the semiconductor component 41, resulting in a short circuit
Method used
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Embodiment Construction
[0019] Figures 4 to 12 A schematic diagram showing a first embodiment of the semiconductor process of the semiconductor device of the present invention. refer to Figure 4 , showing a semiconductor device 50 and a first carrier 11 . The semiconductor device 50 includes a semiconductor substrate 10 and at least one conductive hole 52 . The semiconductor substrate 10 has an upper surface 101 , a second surface 102 , an active layer 103 and several conductive elements 105 . In this embodiment, the semiconductor substrate 10 is a wafer. The active layer 103 is located on the second surface 102 , and the conductive elements 105 are adjacent to the active layer 103 . The conductive hole 52 is located in the semiconductor substrate 10 .
[0020] The conductive hole 52 has a conductor 521 and an insulating wall 522 located on the periphery of the conductor 521 . The conductive hole 52 further includes a first end 525 and a second end 526 . The second end 526 is connected to th...
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The present invention relates to a semiconductor device and a semiconductor technique thereof. The semiconductor device of the invention comprises a semiconductor substrate, at least one conductive hole and at least one insulation ring. The semiconductor substrate is provided with a first surface. The conductive hole is provided in the semiconductor substrate. Each conductive hole is provided with a conductor and an insulation wall which are provided at the periphery of the conductor. Furthermore the conductive hole is exposed from the first surface of the semiconductor substrate. The insulation ring is provided at the outer periphery of the conductive hole, and the depth of the insulation ring is smaller than that of the insulation wall. Because the insulation ring is provided at the outer periphery of the conductive hole, the insulation ring can protect an end of the conductive hole from damage. Furthermore, the dimensions of the insulation hole and the conductive hole are smaller than that of the known conductive hole. The semiconductor device of the invention can be easily connected with other semiconductor device through a surface treatment layer, a heavy cloth layer or an under-ball metal layer.
Description
technical field [0001] The invention relates to a semiconductor device and its semiconductor process. Background technique [0002] figure 1 A schematic cross-sectional view of a known silicon chip is shown. The known silicon chip 30 has a silicon substrate 31 , at least one electronic device 32 , at least one through hole 33 , a protection layer 34 and a redistribution layer 35 . The silicon substrate 31 has a first surface 311 , a second surface 312 and at least one through hole 313 . The electronic device 32 is located in the silicon substrate 31 and exposed on the second surface 312 of the silicon substrate 31 . The through hole 33 runs through the silicon substrate 31 . The through hole 33 includes a barrier layer 333 and a conductor 334 . The barrier layer 333 is located on the sidewall of the through hole 313 , and the conductor 334 is located in the barrier layer 333 . The through hole 33 has a first end 331 and a second end 332 . The first end 331 is exposed ...
Claims
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IPC IPC(8): H01L21/768H01L23/528H01L23/48
CPCH01L21/76898H01L2225/06541H01L2224/16225H01L2924/10253H01L2225/06513H01L23/481H01L21/563H01L25/0657H01L2924/00
Inventor 郑斌宏
Owner ADVANCED SEMICON ENG INC