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Plasma processing apparatus

A plasma and processing device technology, which is applied in the field of plasma processing devices, can solve problems such as uneven plasma processing, and achieve the effect of improving the degree of freedom of adjustment and improving uniformity

Inactive Publication Date: 2011-09-21
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, in the above-mentioned large-diameter wafer, uneven plasma processing may also occur in the circumferential direction. Therefore, in addition to the technology that requires uniform distribution of plasma in the radial direction, there is also a need for plasma in the circumferential direction. Possibility of technology that also equalizes distribution

Method used

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Experimental program
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no. 1 approach

[0038] [First embodiment: square coil, common power supply]

[0039] refer to Figure 1 ~ Figure 4 A first embodiment in which the plasma processing apparatus of the present invention is applied as a plasma etching apparatus will be described. This plasma etching processing apparatus includes a processing container 21 constituted by a vacuum chamber, and a mounting table 3 arranged in the center of the bottom surface of the processing container 21 . The processing container 21 is electrically grounded, and an exhaust port 22 is formed at a position lateral to the mounting table 3 on the bottom surface of the processing container 21 . The exhaust port 22 is connected to a vacuum exhaust unit 23 including a vacuum pump or the like via an exhaust pipe 24 provided with a pressure adjustment valve 24 a as a pressure adjustment unit. A transfer port 25 for loading and unloading the wafer W is provided on a side wall of the processing container 21 , and the transfer port 25 is conf...

no. 2 approach

[0065] [Second Embodiment: Planar Coil, Shared Power Supply]

[0066] In the above-mentioned first embodiment, the square induction coil 70 was described, but in this second embodiment, in order to form the second electric field E2, for example, Figure 12 As shown, a plurality of linear conductive wires 111 are arranged radially over the entire circumferential direction. In this second embodiment, if Figure 12 As shown in (b), a plurality of conductive wires 111 are embedded in an annular flat plate 112 made of, for example, a dielectric material in such a manner that the inner and outer peripheral sides of the conductive wires 111 are exposed, and the flat plate 112 and the plurality of conductive wires 111 are It is installed on the outer top plate 60 .

[0067] In addition, in order to connect the conduction path 72 so that the impedance between the plurality of lead wires 111 becomes the same value as that of the second high-frequency power supply unit 71, for example,...

no. 3 approach

[0071] [Third Embodiment: Square Coil, Multiple Power Supply]

[0072] In the above-mentioned first embodiment, high frequencies are supplied to the plurality of induction coils 70 from the common second high-frequency power supply unit 71, but in this third embodiment, for example, Figure 15 As shown, the second high-frequency power supply unit 71 is connected to each induction coil 70 . Also in this case, the respective conductive paths 72 are set to have the same length so that the impedances between the respective second high-frequency power supply units 71 and the respective induction coils 70 have the same value. In addition, for the common phase shifter 91 connected to these multiple second high-frequency power supply units 71, the signal path 95 is set to the same length so that the phase shifter 91 and these multiple second high-frequency power supply units 71 The impedance between is the same value.

[0073] In this device, the plasma etching process can be perfor...

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Abstract

A gas shower head having many gas discharging ports formed on the lower surface is provided on the top wall of a processing container such that the gas shower head faces a placing table on which a substrate is to be placed, and the top wall of the processing container at the periphery of the gas shower head is composed of a dielectric material. A coil is provided on the dielectric material, and the phase of high frequency waves to be supplied to the gas shower head and the coil is adjusted so that the phase of the electrical field in a processing region above the substrate and the phase of the electrical field in the peripheral region surrounding the processing region are same or opposite to each other.

Description

technical field [0001] The present invention relates to a plasma processing apparatus for performing plasma processing on a substrate. Background technique [0002] In the manufacturing process of semiconductor devices and LCD (Liquid Crystal Display: liquid crystal display), there are substrates such as semiconductor wafers (hereinafter referred to as wafers) and glass plates for LCDs (hereinafter referred to as LCD substrates), for example, etching treatment, Process of plasma treatment such as film formation treatment. When performing the etching process, for example, a pattern mask is formed on the surface of the substrate, and the base film (for example, in the case of the above-mentioned wafer, is stacked in this order from the upper side downwards with an antireflection film, an amorphous carbon film) through the pattern mask. film, a silicon oxide film, and an etching stopper film, etc., are processed. However, when etching a laminated film composed of multilayer f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065H01L21/205
CPCH01J37/32174H01J37/3244H01J37/321H01L21/205H01L21/3065
Inventor 沢田郁夫康松润河西繁
Owner TOKYO ELECTRON LTD
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