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Insulated gate bipolar transistor (IGBT), and method of manufacturing the same

A technology of bipolar transistors and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve problems such as the reduction of resistance in the drift region

Active Publication Date: 2011-09-21
DENSO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, a large number of carriers exist in the drift region, and the resistance of the drift region is lowered

Method used

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  • Insulated gate bipolar transistor (IGBT), and method of manufacturing the same
  • Insulated gate bipolar transistor (IGBT), and method of manufacturing the same
  • Insulated gate bipolar transistor (IGBT), and method of manufacturing the same

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Experimental program
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Embodiment Construction

[0051] First, the structures of the embodiments that will be described in detail below are listed.

[0052] (Feature 1) The second conductivity type impurity concentration in the floating region tends to decrease from the upper end to the lower side to reach a minimum value, and tends to increase from the depth of the minimum value to the lower end.

[0053] (Feature 2) The first conductivity type impurity concentration in the floating region tends to increase from the upper end to the lower side to reach a maximum value, and tends to increase from the depth of the maximum value to the lower end.

[0054] (Feature 3) The second conductivity type impurity concentration in the body region above the floating region tends to increase from the upper end to the lower side to reach a maximum value, and tends to decrease from the depth of the maximum value to the lower end.

[0055] (Feature 4) The second conductivity type impurity concentration in the body region below the floating r...

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PUM

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Abstract

To provide an IGBT in which the variation of an on-voltage is hardly generated even when the manufacturing variations of impurity concentration are generated. In a vertical IGBT in which a first conductive floating region is formed in a second conductive body region, first conductive impurity concentration in the neighborhood of a boundary between the floating region and the upper body region is distributed so as to be made higher from the upper side to the lower side, and the first conductive impurity concentration in the neighborhood of the boundary between the floating region and the lowerbody region is distributed so as to be made lower from the upper side to the lower side, and second conductive impurity concentration in the neighborhood of the boundary between the floating region and the upper body region is distributed so as to be made lower from the upper side to the lower side, and second conductive impurity concentration in the neighborhood of the boundary between the floating region and the lower body region is distributed so as to be made higher from the upper side to the lower side.

Description

technical field [0001] The technology disclosed in this specification relates to an insulated gate bipolar transistor and a method of manufacturing the insulated gate bipolar transistor. Background technique [0002] In Japanese Patent Laid-Open Publication Hei 11-251573, an insulated gate bipolar transistor having an N-type floating region (a region separated from an emitter region and a drift region) formed in a P-type body region is disclosed. ). When the floating region is provided in the body region, the phenomenon of carriers flowing from the drift region into the body region when the IGBT is turned on will be suppressed. Therefore, a large number of carriers exist in the drift region, and the resistance of the drift region is lowered. Therefore, the on-state voltage of the IGBT can be reduced. Contents of the invention [0003] The problem to be solved by the invention [0004] Since an N-type or P-type impurity region is formed by implanting impurities into the...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L21/336H01L29/12H01L29/78
CPCH01L29/7397H01L29/0834H01L29/1095H01L29/66348
Inventor 西胁刚齐藤顺
Owner DENSO CORP