Insulated gate bipolar transistor (IGBT), and method of manufacturing same
A technology of bipolar transistors and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve problems such as the reduction of resistance in the drift region
Active Publication Date: 2013-09-25
DENSO CORP
View PDF6 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Therefore, a large number of carriers exist in the drift region, and the resistance of the drift region is lowered
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0051] First, the structures of the embodiments that will be described in detail below are listed.
[0052] (Feature 1) The second conductivity type impurity concentration in the floating region tends to decrease from the upper end to the lower side to reach a minimum value, and tends to increase from the depth of the minimum value to the lower end.
[0053] (Feature 2) The first conductivity type impurity concentration in the floating region tends to increase from the upper end to the lower side to reach a maximum value, and tends to increase from the depth of the maximum value to the lower end.
[0054] (Feature 3) The second conductivity type impurity concentration in the body region above the floating region tends to increase from the upper end to the lower side to reach a maximum value, and tends to decrease from the depth of the maximum value to the lower end.
[0055] (Feature 4) The second conductivity type impurity concentration in the body region below the floating r...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
PROBLEMS An IGBT which can suppress a variation of on-voltages even if a production variation of density of impurities is caused. MEANS OF SOLVING THE PROBLEMS A vertical IGBT includes a floating region of the first conductive type being formed within the body region of the second conductive type. A density of first conductive type impurities at a boundary of the floating region and the body region that is above the floating region is distributed to increase from an upper side to a lower side. A density of the first conductive type impurities at a boundary of the floating region and the body region that is under the floating region is distributed to decrease from an upper side to a lower side. A density of second conductive type impurities at a boundary of the floating region and the body region that is above the floating region is distributed to decrease from an upper side to a lower side. A density of the second conductive type impurities at a boundary of the floating region and the body region that is under the floating region is distributed to increase from an upper side to a lower side.
Description
technical field [0001] The technology disclosed in this specification relates to an insulated gate bipolar transistor and a method of manufacturing the insulated gate bipolar transistor. Background technique [0002] In Japanese Patent Laid-Open Publication Hei 11-251573, an insulated gate bipolar transistor having an N-type floating region (a region separated from an emitter region and a drift region) formed in a P-type body region is disclosed. ). When the floating region is provided in the body region, the phenomenon of carriers flowing from the drift region into the body region when the IGBT is turned on will be suppressed. Therefore, a large number of carriers exist in the drift region, and the resistance of the drift region is lowered. Therefore, the on-state voltage of the IGBT can be reduced. Contents of the invention [0003] The problem to be solved by the invention [0004] Since an N-type or P-type impurity region is formed by implanting impurities into the...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L21/336H01L29/12H01L29/78
CPCH01L29/7397H01L29/0834H01L29/1095H01L29/66348
Inventor 西胁刚齐藤顺
Owner DENSO CORP