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Submodules and power semiconductor modules

A technology of power semiconductors and sub-modules, which is applied in the direction of semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve the problem of suppressing the loss of effectiveness of diodes, and achieve the effect of improving efficiency

Active Publication Date: 2016-01-20
SEMIKRON ELECTRONICS GMBH & CO KG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These suppression diodes are ineffective or at worst ineffective

Method used

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  • Submodules and power semiconductor modules
  • Submodules and power semiconductor modules
  • Submodules and power semiconductor modules

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] figure 1 A top view of a power semiconductor module 2 is shown, which is surrounded by a housing 4 . The power semiconductor module 2 includes a carrier 6 in the form of a DCB ceramic substrate. The power semiconductor module 2 contains a power semiconductor 8 in the form of a transistor chip 10 , embodied here as an IGBT, for example. The power semiconductor 8 is applied to the conductor tracks 12 of the carrier 6 which are arranged on the upper side of the carrier 6 . The power semiconductor 8 , the conductor tracks 12 and a part of the carrier 6 whose area is suitably assigned to these parts form a submodule 22 a.

[0040] Four emission windows 18 are arranged on the upper side 16 of the power semiconductor 8 , which serve to contact the emitter E thereof. Furthermore, a gate window 20 is provided for contacting the gate G. FIG. The gate window 20 here forms the control input 21 of the power semiconductor 8 . The interface for the collector C is at the power sem...

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Abstract

submodules and power semiconductor modules. The submodule (22b) of the power semiconductor module has: - at least a part of the carrier, - conductor tracks (24) arranged on the part of the carrier, - a monolithically integrated semiconductor structure (26) applied on the conductor tracks, which comprising: - a contact surface (50) connecting the semiconductor structure to the conductor track, - a first interface (28a) and a second interface (28b), and an integrated ohmic resistor (40) connected between these interfaces, and - a second A triple interface (28c) and a double diode structure (38) connected between this interface and the second interface. A power semiconductor module (2) with: - the above-mentioned first submodule (22b), and - a power semiconductor (8), which has a control input (21) and is arranged on a carrier and forms a second submodule ( 22a), wherein - the first submodule (22b) is located on the carrier directly in the vicinity of the power semiconductors, and - the control input is connected to the second interface (28b) of the first submodule.

Description

technical field [0001] The invention relates to a submodule of a power semiconductor module and to a power semiconductor module. Background technique [0002] A power semiconductor module has one or more carriers on which the actual power semiconductor switches are arranged. The carrier is usually an insulating substrate, eg DCB-ceramic (Direct Copper Bonding). Power semiconductor switches are soldered or sintered on this substrate, for example. [0003] Especially in the case of a module with a plurality of power semiconductor switches, each power semiconductor switch in itself forms a functional unit, ie a submodule. The part of the carrier that is assigned to the power semiconductor switches is also considered to belong to this submodule. In addition, conductor tracks of the substrate for electrical or mechanical contacting of the semiconductor switches are included in this submodule. [0004] Power semiconductor switches are generally transistor chips, eg IGBTs (Insu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/07H01L27/02H01L23/02
CPCH01L23/62H01L25/072H01L2224/48137H01L2224/49111H01L2924/13091H01L2924/13055H01L2924/3011H01L2924/30107H01L2924/12032H01L2924/1305H01L2224/0603H01L2924/00
Inventor 斯文·贝尔贝里希阿伦特·温特里希
Owner SEMIKRON ELECTRONICS GMBH & CO KG