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Semiconductor device

A semiconductor and conductive technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as component damage and achieve the effect of suppressing component damage

Inactive Publication Date: 2014-08-06
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the terminal area of ​​the element, if the depletion layer extends to the end of the chip, leakage current flows to the end of the chip and destroys the element

Method used

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  • Semiconductor device
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Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0016] For the first implementation, use figure 1 to explain. figure 1 is a schematic diagram of important parts of the semiconductor device 100 according to the first embodiment, figure 1 (a) is a cross-sectional view of an important part of the semiconductor device 100 . figure 1 (b) is a plan view of an important part of the semiconductor device, and the cross-sectional view of A-A in the figure is 1(a). figure 1 (c) is figure 1 (b) Cross-sectional view of B-B. exist figure 1 In the plan view of (b), one direction from the center toward the end of the semiconductor device 100 is defined as the X direction (second direction), and the direction perpendicular thereto is defined as the Y direction (first direction). The same applies to the following embodiments.

[0017] Such as figure 1 As shown, the semiconductor device 100 includes first to fourth semiconductor layers. When viewed from above, it includes: an element region formed by a gate electrode disposed in a firs...

no. 2 approach

[0050] use figure 2 The semiconductor device 200 according to the second embodiment will be described. figure 2 is a schematic diagram of important parts of the semiconductor device 200 according to the second embodiment, figure 2 (a) is a cross-sectional view of an important part of the semiconductor device 200 . figure 2 (b) is a top view of an important part of the semiconductor device, and the cross-sectional view of line C-C in the figure is figure 2 (a). In addition, the same reference numerals or symbols are used for components having the same configuration as those described in the first embodiment, and description thereof will be omitted. Differences from the first embodiment will be mainly described.

[0051] In the semiconductor device 200 according to the second embodiment, as in the first embodiment, the second opening 15 is formed of a plurality of divisions spaced apart along the Y direction. However, in the present embodiment, the second opening 15 do...

no. 3 approach

[0054] use image 3 Next, a semiconductor device 300 according to the third embodiment will be described. image 3 is a schematic diagram of important parts of the semiconductor device 300 according to the third embodiment, image 3 (a) is a cross-sectional view of important parts of the semiconductor device 300 . image 3 (b) is a plan view of an important part of the semiconductor device, and the cross-sectional view taken along line D-D in the figure is 3(a). In addition, the same reference numerals or symbols are used for components having the same configuration as those described in the first embodiment, and description thereof will be omitted. Differences from the first embodiment will be mainly described.

[0055] In the semiconductor device 300 according to the third embodiment, like the semiconductor device 100 according to the first embodiment, the distance between the second opening 15 and the second trench 6 in the X direction alternately has a wider part and a ...

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PUM

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Abstract

The semiconductor device of this embodiment includes in order: a first electrode (13), a first semiconductor layer (1) of the first conductivity type, a second semiconductor layer (2) of the first conductivity type, a third semiconductor layer of the second conductivity type layer (3), and a fourth semiconductor layer (4) of the first conductivity type. The element region is provided with a gate electrode (8) inside the first trench (5). The second groove (6) of the ring structure penetrates through the fourth semiconductor layer (4) and the third semiconductor layer (3) to reach the second semiconductor layer (2), forming a groove with an element region inside A first region and a second region surrounding the first region on the outside. The first openings (14) are arranged between adjacent first grooves (5). A second opening (15) wider than the first opening (14) is provided in the first region outside the element region. The second electrode (17) is electrically connected to the third semiconductor layer (3) and the fourth semiconductor layer (4) via the first opening (14) and the second opening (15).

Description

[0001] This application is based on and claims priority from prior Japanese Patent Application No. 2010-173502 filed on Aug. 2, 2010, the entire contents of which are hereby incorporated by reference. technical field [0002] Embodiments of the present invention relate to semiconductor devices for high power such as power MOSFETs. Background technique [0003] In a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor, Metal Oxide Semiconductor Field Effect Transistor), an element region through which current flows and a termination region formed on the outer periphery of the chip surrounding the element region are formed. In the terminal region of the element, if the depletion layer extends to the edge of the chip, leakage current flows to the edge of the chip and destroys the element. To prevent this, it is necessary to terminate the base layer and the source layer within the device region. In order to form this structure, a manufacturing process of forming a pa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/423H01L29/78
CPCH01L29/407H01L29/41766H01L29/402H01L29/7811H01L29/42372H01L29/0657H01L29/404H01L29/0696H01L29/0661H01L29/0653H01L29/41741H01L29/7813
Inventor 富田幸太松田升浦秀幸
Owner KK TOSHIBA