Unlock instant, AI-driven research and patent intelligence for your innovation.

Lithographic apparatus and device manufacturing method

A technology for lithography equipment and emitters, which is applied in the field of device manufacturing and can solve problems such as inability to read and read errors.

Active Publication Date: 2014-12-10
ASML NETHERLANDS BV
View PDF17 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This can cause errors to be introduced into the reading process, resulting in no readings, or completely incorrect readings

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lithographic apparatus and device manufacturing method
  • Lithographic apparatus and device manufacturing method
  • Lithographic apparatus and device manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] figure 1 A lithographic apparatus according to an embodiment of the invention is schematically shown. The lithography equipment includes:

[0027] - an illumination system (illuminator) IL configured to condition a radiation beam B (eg, ultraviolet (UV) radiation or deep ultraviolet (DUV) radiation);

[0028] - a support structure (eg mask table) MT configured to support the patterning device (eg mask) MA and connected to first positioning means PM configured to precisely position the patterning device according to determined parameters;

[0029]- a substrate table (e.g., wafer table) WT configured to hold a substrate (e.g., a resist-coated wafer) W, and configured to precisely position the substrate according to determined parameters with a second the positioning device PW is connected; and

[0030] - a projection system (e.g. a refractive projection lens system) PS configured to project the pattern imparted to the radiation beam B by the patterning device MA onto ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Reynolds numberaaaaaaaaaa
Reynolds numberaaaaaaaaaa
Login to View More

Abstract

A lithographic apparatus having a first outlet (110) to provide a thermally conditioned fluid with a first flow characteristic to at least part of a sensor beam path, and a second outlet (120) associated with the first outlet (110) and to provide a thermally conditioned fluid with a second flow characteristic, different to the first flow characteristic, adjacent the thermally conditioned fluid from the first outlet (110).

Description

technical field [0001] The invention relates to a photolithographic equipment and a device manufacturing method. Background technique [0002] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually a target portion of the substrate. For example, lithographic equipment may be used in the manufacture of integrated circuits (ICs). In this case, a patterning device, alternatively referred to as a mask or reticle, may be used to generate the circuit pattern to be formed on the individual layers of the IC. The pattern can be transferred onto a target portion (eg, comprising a portion, one or more dies) on a substrate (eg, a silicon wafer). Typically, the pattern is transferred by imaging the pattern onto a layer of radiation sensitive material (resist) provided on the substrate. Typically, a single substrate will contain a network of adjacent target portions that are successively patterned. Known lithographic apparatuses include: a so-call...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20
CPCG03F7/70341G03F7/7085G03F7/70908G03F7/70775H01L21/0274G03F7/70608G03F7/70683G03F7/70916
Inventor J·S·C·维斯特尔拉肯E·A·F·范德帕斯奇P·P·斯汀贾尔特F·范德马斯特G·A·H·F·詹森
Owner ASML NETHERLANDS BV