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Method for contacting a semiconductor substrate

A semiconductor and substrate technology, applied in the field of generating contacts on solar cells, can solve the problems of high material usage, material loss, etc.

Inactive Publication Date: 2012-04-18
UNIV STUTTGART
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The problem with this method is that the unsintered material has to be separated out or collected again in a special process step, which means firstly a high material usage and secondly a possible loss of material

Method used

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  • Method for contacting a semiconductor substrate
  • Method for contacting a semiconductor substrate
  • Method for contacting a semiconductor substrate

Examples

Experimental program
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Embodiment Construction

[0040] Refer below image 3 Explain in detail the principle of the LIFT method.

[0041] In the production of solar cells, the front and back of the solar cell must be provided with metallic contacts. For example in image 3In a), b), and c), the p-type doped substrate (silicon wafer or polysilicon) is marked with 11, and there is a layer of n-type doped material on the front of the substrate to form the emitter. The substrate layer 10 is provided with a cover layer 12 which is an antireflection layer, for example a silicon nitride layer with a layer thickness of 50 to 100 nm.

[0042] Using the LIFT method, metal plantings 26 are produced directly on the surface of the substrate layer 10 through the cover layer 12 . For this purpose, a carrier material 14 in the form of a thin glass layer or film is arranged immediately in front of the substrate layer 10 , and the side of the carrier material facing the substrate layer 10 is provided with a thin metal layer 16 . This can ...

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Abstract

The invention relates to a method for contacting a semiconductor substrate (10), especially for contacting solar cells, a metal seed structure (26) being produced by a LIFT process on the surface to be contacted and the seed structure (26) being then reinforced.

Description

technical field [0001] The invention relates to a method for producing contacts on semiconductor substrates, in particular solar cells. Background technique [0002] On a small scale, particularly good contacts can be produced on solar cells by vapor deposition of samples of prefabricated structures by lithographic methods. However, this method is too expensive for large-scale industrial production because too many steps are required, and vapor deposition of the entire sample would lose most of the metal used. [0003] For this reason, screen printing is widely used in industry to manufacture contacts on solar cells. A disadvantage of this method is that high temperature steps are necessary to make the contacts to the solar cells. Also, the contact resistance of screen printed lines is about 10 -3 to 10 -2 Ohm cm 2 , larger than the contacts generated by evaporation. The glass sintering and the porosity of the wire reduces the conductivity of the wire about 4 times com...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224
CPCH01L2224/13023H01L2924/01082H01L24/13H01L24/05H01L2924/01029H01L2924/00013H01L2224/13099H01L2924/01022H01L31/022425Y02E10/50H01L2924/01013Y02E10/52H01L2924/0001H01L24/03H01L2224/13006H01L2224/05568H01L2924/01047H01L2224/031H01L2924/01005H01L2924/01033H01L2924/01006H01L24/11H01L2924/0106H01L2924/0102H01L2224/03334H01L2224/05655H01L2224/03003H01L2224/03505H01L2224/0401H01L2924/00014H01L2924/0002H01L2224/13599H01L2224/05599H01L2224/05099H01L2224/29099H01L2224/29599H01L2224/05552H01L31/0224H01L31/04H01L31/18
Inventor 于尔根·科勒托比亚斯·罗德彼得·格拉比茨于尔根·沃纳
Owner UNIV STUTTGART