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Amplitude-modulated variable-frequency pulse current annealing treatment device for amorphous metal fibers

A frequency conversion pulse, amorphous metal technology, which is applied in the field of current annealing treatment devices, can solve the problem that the magnetic properties of amorphous metal fibers are not very good, and achieves improvement of internal structure relaxation, maintenance of fiber toughness, and continuous and controllable operation process. Effect

Active Publication Date: 2013-04-03
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the magnetic properties of the amorphous metal fiber obtained by the existing annealing treatment device are not very good, and to provide an annealing treatment device for the amplitude modulation variable frequency pulse current of the amorphous metal fiber

Method used

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  • Amplitude-modulated variable-frequency pulse current annealing treatment device for amorphous metal fibers
  • Amplitude-modulated variable-frequency pulse current annealing treatment device for amorphous metal fibers
  • Amplitude-modulated variable-frequency pulse current annealing treatment device for amorphous metal fibers

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specific Embodiment approach 1

[0011] Specific implementation mode one: combine figure 1 Describe the present embodiment, the amplitude modulation frequency conversion pulse current annealing treatment device of the amorphous metal fiber of the present invention, it comprises square wave signal generation circuit 1, frequency division circuit 2, frequency selection circuit 3, MOS tube switch circuit 4 and amplitude modulation circuit 5; The signal output end of the square wave signal generation circuit 1 is connected to the signal input end of the frequency division circuit 2, the signal output end of the frequency division circuit 2 is connected to the signal input end of the frequency selection circuit 3, and the signal output end of the frequency selection circuit 3 is connected to the MOS The signal input end of the tube switch circuit 4 is connected, and the signal output end of the MOS tube switch circuit 4 is connected with the signal input end of the amplitude modulation circuit 5 .

specific Embodiment approach 2

[0012] Specific implementation mode two: combination figure 1 and image 3 Describe this embodiment. The difference between this embodiment and the first embodiment is that the square wave signal generating circuit 1 includes a bipolar hysteresis comparator U1A, a DC power source V1, a DC power source V2, an AC power source V3, a transformer T1, a resistor R1, a resistor R2 and resistor R3;

[0013] One end of the AC power supply V3 is connected to one end of the primary winding of the transformer T1, and the other end of the AC power supply V3 is connected to the other end of the primary winding of the transformer T1; one end of the secondary winding of the transformer T1 is grounded, and the other end of the secondary winding of the transformer T1 is connected to the double The negative signal of the polar hysteresis comparator U1A is connected to the No. 2 pin of the input terminal, and the No. 3 pin of the positive input terminal of the bipolar hysteresis comparator U1A i...

specific Embodiment approach 3

[0014] Specific implementation mode three: combination figure 1 and image 3 Describe this embodiment, the difference between this embodiment and specific embodiments one and two is that the frequency divider circuit 2 includes a frequency divider U3; the No. 1 pin of the pulse signal input end of the frequency divider U3 and the pin of the bipolar hysteresis comparator U1A The signal output terminal is connected, the 2nd pin of the MR terminal of the frequency divider U3 is grounded, the 2nd frequency division signal output terminal 12th pin of the frequency divider U3, the 4th frequency division signal output terminal 11th pin and the 8th frequency division signal output Terminal 9 is the signal output terminal of frequency division circuit 2.

[0015] Specific implementation mode four: combination figure 1 and image 3 Describe this embodiment, the difference between this embodiment and specific embodiments one and three is that the frequency selection circuit 3 includes...

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Abstract

The invention relates to a current annealing treatment device, in particular to an amplitude-modulated variable-frequency pulse current annealing treatment device for amorphous metal fibers, aiming at solving the problem that the magnetic properties of amorphous metal fibers obtained by the existing annealing treatment device are not very good. The annealing treatment device comprises a square signal generating circuit, a frequency dividing circuit, a frequency selecting circuit, an MOS(Metal Oxide Semiconductor) tube switching circuit and an amplitude modulating circuit, wherein the signal output end of the square signal generating circuit is connected with the signal input end of the frequency dividing circuit, the signal output end of the frequency dividing circuit is connected with the signal input end of the frequency selecting circuit, the signal output end of the frequency selecting circuit is connected with the signal input end of the MOS tube switching circuit, the signal output end of the MOS tube switching circuit is connected with the signal input end of the amplitude modulating circuit. The annealing treatment device provided by the invention is used for performing annealing treatment on amorphous metal fibers, can not cause fiber surface oxidation and crystallization of microstructure, and can effectively perfect and improve the magnetic properties of the amorphous metal fibers.

Description

technical field [0001] The invention relates to a current annealing treatment device, in particular to an amplitude modulation and frequency conversion pulse current annealing treatment device for amorphous metal fibers. Background technique [0002] The microstructure of amorphous metal fibers is long-range disorder and short-range order, and it has good geometric symmetry, small hysteresis loss and coercive force, negative or near zero magnetostriction coefficient, high magnetic permeability, Special magnetic domain structure and skin effect (Skin Effect) and other characteristics, especially the significant giant magneto-impedance effect (giant magneto-impedance, GMI) at higher frequencies are significantly better than amorphous thin strips, magnetic films and electrodeposited composite fibers and other types of materials, so amorphous metal fibers are more suitable as new sensitive materials for GMI magnetic sensors (see V.Zhukova, M.Ipatov, A.Zhukov.Thin Magnetically So...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C21D1/26C21D1/40
Inventor 孙剑飞刘景顺邢大伟曹福洋
Owner HARBIN INST OF TECH