Making an emissive layer for multicolored OLEDs
A technology of emissive layer and emissive material, which is applied in coatings, devices for coating liquid on the surface, semiconductor devices, etc., can solve problems such as increased working voltage and influence on working stability, and achieve the effect of simplifying the manufacturing process
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Embodiment 1
[0083] Devices were constructed using conventional vacuum evaporation in the following sequence:
[0084] 1) A glass substrate coated with an 85 nm indium tin oxide (ITO) layer as an anode was sequentially ultrasonicated in a commercially available cleaner, cleaned in deionized water, exposed to oxygen plasma for about 1 minute, and passed through such as US CHF as described in 6,208,075 3 coated with 1nm fluorocarbon (CF x) a hole injection layer (HIL);
[0085] 2) Deposit a 60nm thick NPB layer on the ITO anode as a hole transport layer (HTL);
[0086] 3) Form a 30 nm thick non-emitting layer (NEL) with 93% NPB and 7% GD-1 on the HTL;
[0087] 4) Form a 15nm thick NPB buffer layer on the NEL;
[0088] 5) Form a 20nm thick blue light emitting layer (BLEL) with 99.2% host-1 and 0.8% BD-4 on HTL2;
[0089] 6) The first electron transport layer (ETL1) of host-1 is subsequently formed on the BLEL with a thickness of 32.5 nm;
[0090] 7) Form a second electron transport laye...
Embodiment 2
[0095] Another device was constructed in a similar manner to Example 1 as follows:
[0096] 1) Make a glass substrate coated with an 85nm indium tin oxide (ITO) layer as an anode sequentially ultrasonically treated in a commercially available cleaner, cleaned in deionized water, exposed to oxygen plasma for about 1 minute, and passed through such as the United States CHF as described in Patent No. 6,208,075 3 coated with 1nm fluorocarbon (CF x ) a hole injection layer (HIL);
[0097] 2) Form a 35 nm thick first non-emissive layer (NEL1) on the HIL with 98.3% NPB and 1.7% RD-1;
[0098] 3) Form a 15nm thick NPB buffer layer (BL1) on NEL1;
[0099] 4) Form a 30 nm thick second non-emissive layer (NEL2) on the buffer with 93% TAPC and 7% GD-1;
[0100] 5) Form a 5nm thick TAPC buffer layer (BL2) on NEL2;
[0101] 6) Form a 20 nm thick blue light emitting layer (BLEL) with 99.2% host-1 and 0.8% BD-4 on BL2;
[0102] 8) The first electron transport layer (ETL1) of host-1 is s...
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