Block management method, memory device and controller of memory device
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- SILICON MOTION TECH CORP
- Publication Date
- 2012-05-30
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Abstract
Description
technical field
[0001] The present invention relates to the access (Access) of flash memory (Flash Memory) with multiple channels, and more specifically, relates to a method for block management, a related memory device and its controller. Background technique
[0002] In recent years, due to the continuous development of flash memory technology, various portable memory devices (for example: memory cards conforming to SD / MMC, CF, MS, XD standards) or solid state drives (Solid State Drive, SSD) with flash memory are widely used implemented in many applications. Therefore, the access control of the flash memory in these memory devices has become a very hot topic.
[0003] As far as the commonly used NAND flash memory is concerned, it can be mainly divided into two types of flash memory: single level cell (Single Level Cell, SLC) and multiple level cell (Multiple Level Cell, MLC). Each transistor in the single-level cell flash memory, which is regarded as a memory unit, has o...